AVS 49th International Symposium
    Thin Films Tuesday Sessions
       Session TF-TuP

Paper TF-TuP15
Electrical and Optical Properties of a-C:H:Si Films Deposited by r.f. Plasma Chemical Vapor Deposition

Tuesday, November 5, 2002, 5:30 pm, Room Exhibit Hall B2

Session: Poster Session
Presenter: I.J. Kim, Sungkyunkwan University, Korea
Authors: I.J. Kim, Sungkyunkwan University, Korea
Y.T. Kim, Sungkyunkwan University, Korea
W.S. Choi, Sungkyunkwan University, Korea
D.H. Yoon, Sungkyunkwan University, Korea
B. Hong, Sungkyunkwan University, Korea
Correspondent: Click to Email
Research in recent years has been made to study the incorporation of silicon atoms into hydrogenated amorphous carbon(a-C:H:Si) films with interesting results. Films with very low friction coefficients, improved adhesion and increased sp@super 3@ character have been reported. However, an investigation of the electrical and optical properties of silicon incorporated hydrogenated amorphous carbon(a-C:H:Si) films is still lacking. In this study, we present the results obtained for electrical and optical properties of silicon incorporated hydrogenated amorphous carbon(a-C:H:Si) films deposited on Si(100) wafers and corning 7059 glass from radio-frequency glow discharge of mixtures of methane and silane gas. The flow rates of CH@sub 4@ and H@sub 2@ were fixed at 10 Sccm and 90 Sccm, respectively, and the SiH@sub 4@ flow rate was varied from 0 to 2.0 Sccm. We have used Raman spectrophotometer, ultra violet-visible(UV-VIS) spectrometer and Fourier transform IR(FT-IR) for determining optical properties and current-voltage(I-V) measurement for electrical proprties.