AVS 49th International Symposium
    Thin Films Tuesday Sessions
       Session TF-TuP

Paper TF-TuP24
The Distribution of Ge during Oxidation of epi-Si@sub 1-X@Ge@sub X@

Tuesday, November 5, 2002, 5:30 pm, Room Exhibit Hall B2

Session: Poster Session
Presenter: B.G. Min, Yonsei University, Korea
Authors: B.G. Min, Yonsei University, Korea
S.-K. Kang, Yonsei University, Korea
Y.H. Hong, Yonsei University, Korea
D.-H. Ko, Yonsei University, Korea
Correspondent: Click to Email
Silicon Germanium alloys have been received considerable attention in recent years for their potential application in advanced electronic and optoelectronic devices. The oxidation behavior of this material continues to be a troublesome issue that impedes its timely development. The distribution of Ge and the oxidation mechanism of epi-Si@sub 1-X@Ge@sub X@ have been investigated. The epi-Si@sub 1-X@Ge@sub X@ was deposited by UHV-CVD at 650@sub o@C. The atomic fraction of Ge were 0%, 15% and 30%. The thickness of epi-Si@sub 1-X@Ge@sub X@ layer is 30nm. Oxidations were performed at 800, 850, 900°C under 1atm of dry and wet O@sub 2@ for various time. Oxidation rates were compared with various Ge contents from 0% to 30%. The formed oxide was pure SiO@sub 2@ and Ge atoms piled up at the SiO@sub 2@/ Si@sub 1-X@Ge@sub X@ interface. Contents and regions of Ge-rich layer were varied with the Ge contents and oxidation rates. It was due to different diffusion mechanism of Si source in the epi-Si@sub 1-X@Ge@sub X@ with that in pure Si substrates during oxidation. By AES and HRTEM analyses, we observed the contents of Ge and the width of Ge-rich layer. In addition, we will discuss the electrical properties of MOS capacitor with Pt gate electrode.