| AVS 45th International Symposium | |
| Thin Films Division | Monday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| TF-MoP1 Studies on Anti-Glare, Anti-Static and Transparent Conductive Film on Display Tubes G.K. Xi, G.H. Zhang, S.L. Li, S.M. Shao, W. Guo, X.J. He, Nankai University, China |
| TF-MoP2 Humidity Sensing Properties of Plasma Polymerized Organic Thin Films G.B. Park, Yuhan College, Korea, J.T. Kim, D.C. Lee, Inha University, Korea, C. Kim, Korea Electronic Technology Institute |
| TF-MoP3 Rotating-Compensator Spectroscopic Ellipsometry: Applications of Four-Parameter Stokes Vector Spectroscopy to Real Time Characterization of Non-Ideal Thin Films R.W. Collins, P.I. Rovira, J.C. Lee, Pennsylvania State University |
| TF-MoP4 Characterization of Thin Metal Films Processed at Different Temperatures L. He, J.E. Siewenie, Northern Illinois University |
| TF-MoP5 Optical Properties of the Ge:Sb:Te System E. Garcia-Garcia, Univ. Autonoma de Queretaro, Mexico, A. Mendoza, G. Martinez-Montes, Univ. Autonoma de Puebla, Mexico, Y.V. Vorobiev, J. Gonzalez-Hernandez, CINVESTAV-IPN, Mexico, B.S. Chao, Energy Conversion Devices |
| TF-MoP6 Influence of Annealing Temperature on the Formation and Characteristics of Sol-gel Prepared ZnO Films R. Castanedo-Pérez, O. Jiménez-Sandoval, S.J. Jiménez-Sandoval, A. Maldonado-Alvarez, J. Márquez-Marín, G. Torres-Delgado, Cinvestav-IPN, Mexico |
| TF-MoP7 Structural Characterization of SrBi@sub 2@Ta@sub 2@O@sub 9@ Ferroelectric Thin Films Grown by PLD on Pt and RuO@sub 2@ Bottom Electrodes J.M. Siqueiros, UNAM, Mexico, M.P. Cruz, CICESE, Mexico, J. Portelles, Universidad de la Habana, Cuba, R. Machorro, G. Hirata, S. Wang, UNAM, Mexico |
| TF-MoP8 Characteristics of CuInSe@sub 2@ Thin Films Prepared in Different Selenization Pressures S.D. Kim, C.H. Chung, Seoul National University, Korea, K.H. Yoon, J.S. Song, Korea Institute of Energy Research, Korea, H.J. Kim, Seoul National University, Korea |
| TF-MoP9 Growth and Characterization of Epitaxial Films of Tungsten-Doped Vanadium Oxides on Sapphire (110) by Reactive Magnetron Sputtering P. Jin, M. Tazawa, M. Ikeyama, S. Tanemura, National Industrial Research Institute of Nagoya, Japan, K. Macak, X. Wang, U. Helmersson, Linkoping University, Sweden |
| TF-MoP10 Stability of Transparent Conducting Oxide Films for Use at High Temperatures T. Minami, T. Miyata, T. Yamamoto, Kanazawa Institute of Technology, Japan |
| TF-MoP11 Texture and Grain Size Modification through the Different Sintering Conditions for Ceramics of the Sr@sub 0.5@Ba@sub 0.5@TiO@sub 3@ Type J.M. Siqueiros, UNAM, Mexico, J. Portelles, S. Garcia, Universidad de la Habana, Cuba, S. Aguilera, Universidad de Catolica de Norte, Chile, M. Xiao, UNAM, Mexico, A. Fundora, Universidad de la Habana, Cuba |
| TF-MoP12 Microstructure Study of PMN-PT Films Grown on Metal Electrodes by PLD J.M. Siqueiros, UNAM, Mexico, J. Portelles, A. Fundora, Universidad de la Habana, Cuba, S. Aguilera, Universidad de Catolica de Norte, Chile |
| TF-MoP13 Columnar Growth of Tin from Liquid Metal Ion Source Studied by In-situ Transmission Electron Microscopy H. Kimata, Y. Kondo, ERATO, Japan Science and Tech. Corp., K. Takayanagi, Tokyo Institute of Technology, Japan |
| TF-MoP14 Characterization of TiOx Film deposited on Ti-6Al-4V Alloy by Reactive Sputtering in Oxygen Atmosphere T. Sonoda, M. Kato, National Industrial Research Institute of Nagoya, Japan |
| TF-MoP15 Photoconductivity of Free-standing Diamond Film S.-H. Kim, Silla University, South Korea, I.T. Han, Samsung Advanced Institute of Technology, South Korea, T.-G. Kim, Miryang National University, South Korea |
| TF-MoP16 Target Compound Layer Formation during Reactive Sputtering L.B. Jonsson, T. Nyberg, S. Berg, Uppsala University, Sweden |
| TF-MoP17 Characterization of YSZ(Yttria-Stabilized Zirconia) Thin Films Prepared by RF-Magnetron Sputtering for Oxygen Gas Sensor J.W. Bae, J.Y. Park, G.Y. Yeom, Sungkyunkwan University, Korea, K.D. Kim, Y.A. Cho, J.S. Jeon, D.S. Choi, Korea Gas Corporation |
| TF-MoP18 Growth Characteristics and Deposition Mechanism of SrTiO@sub 3@ Thin Films by Plasma Enhanced MOCVD Y-.B. Hahn, D.O. Kim, K.S. Nahm, Chonbuk National University, Korea |
| TF-MoP19 Investigation of Ti and Cu Atom Density in Magnetron Sputtering Process Using Atomic Absorption Spectroscopy E. Augustyniak, S.V. Filimonov, C. Lu, Intelligent Sensor Technology |
| TF-MoP20 A Study of the Effect of Low Dielectric Constant PAE-2 by Plasma Treatment T.C. Chang, National Nano Device Laboratory, Republic of China, M.F. Chou, National Chiao Tung University, Republic of China, T.W. Hsiao, J.Y. Lin, National Yun-Lin University, Republic of China, C.Y. Chang, National Chiao Tung University, Republic of China, M.S.K. Chen, A. Tuan, Air Product Company, Republic of China, S. Chou, San Fu Company, Republic of China |
| TF-MoP21 Porous Polycrystalline Silicon Micro-Electronic Sensor P.G. Han, H. Wong, The City University of Hong Kong, China, M.C. Poon, The Hong Kong University of Science & Technology, China, N. Wang, The City University of Hong Kong, China |
| TF-MoP22 Thickness and Index Measurement of Transparent Thin Films using Neural Network processed Reflectance Data M.F. Tabet, W.A. McGahan, Nanometrics Inc. |
| TF-MoP23 Characterization of PECVD Hydrogenated Amorphous Silicon (a-Si:H) T.C. Ang, M.S. Tse, Nanyang Technological University, Singapore, L.H. Chan, J.L. Sudijono, Chartered Semiconductor Manufacturing Ltd., Singapore |
| TF-MoP24 The Analysis of Silicon Oxynitrides with Spectroscopic Ellipsometry and Auger Spectroscopy, Compared to Analyses by RBS, and FTIR H.G. Tompkins, R. Gregory, P.W. Deal, S.M. Smith, Motorola, Inc. |
| TF-MoP25 Density Measurement of Thin Glass Layers for Gas Barrier Films N. Fukugami, H. Nishino, M. Yanaka, Y. Tsukahara, Toppan Printing Co., Ltd., Japan |
| TF-MoP26 Accurate and Rapid Determination of Thickness, n and k Spectra, and Resistivity of ITO Films K. Zhang, EG&G, R. Forouhi, I. Bloomer, n&k Technology |
| TF-MoP27 Mechanical Properties and Strengthening Mechanisms of Pure Iron Implanted with Metal Ions D. Yang, University of Alabama, Q. Xue, Lanzhou Institute of Chemical Physics, China |
| TF-MoP28 The Dislocation Network Developed Deep in Titanium Nitride by Ion Implantation A.J. Perry, A.I.M.S. Marketing, Japan, D.E. Geist, Analytical Reference Materials International, Y.P. Sharkeev, Russian Academy of Sciences, S.V. Fortuna, Tomsk State University of Architecture & Building, Russia |