AVS 45th International Symposium
    Thin Films Division Monday Sessions
       Session TF-MoP

Paper TF-MoP18
Growth Characteristics and Deposition Mechanism of SrTiO@sub 3@ Thin Films by Plasma Enhanced MOCVD

Monday, November 2, 1998, 5:30 pm, Room Hall A

Session: Thin Films Poster Session
Presenter: D.O. Kim, Chonbuk National University, Korea
Authors: Y-.B. Hahn, Chonbuk National University, Korea
D.O. Kim, Chonbuk National University, Korea
K.S. Nahm, Chonbuk National University, Korea
Correspondent: Click to Email
Dielectric SrTiO@sub 3@ ultra thin films having 30 - 75 nm thickness were deposited on Pt/Si and Ir/Si substrates by plasma enhanced MOCVD using high purity Ti(O-i-C@sub 3@H@sub 7@)@sub 4@, Sr(tmhd)@sub 2@ and O@sub 2@. Depositions were carried out under various operation conditions. The deposition rates were substantially influenced by bubbler temperature (T@sub b@), substrate temperature (T@sub s@) and rf power. The optimum conditions of deposition were T@sub b@ = 60 @super o@C for Ti(O-i-C@sub 3@H@sub 7@)@sub 4@ and 220 @super o@C for Sr(tmhd)@sub 2@, T@sub s@ = 550 @super o@C, 130 sccm O@sub 2@, and 160 W rf with carrier gas flow rates of 40 sccm for Ti(O-i-C@sub 3@H@sub 7@)@sub 4@ and 130 sccm for Sr(tmhd)@sub 2@. The deposition process was controlled by chemical reaction at < 500 @super o@C, and by mass transfer above 550 @super o@C. Decomposition of Ti(O-i-C@sub 3@H@sub 7@)@sub 4@ was enhanced with increasing rf power, but that of Sr(tmhd)@sub 2@ was greatly affected by the substrate temperature. A deposition mechanism of SrTiO@sub 3@ was proposed based on the decomposition rates of Ti(O-i-C@sub 3@H@sub 7@)@sub 4@ and Sr(tmhd)@sub 2@.