AVS 45th International Symposium
    Thin Films Division Monday Sessions
       Session TF-MoP

Paper TF-MoP15
Photoconductivity of Free-standing Diamond Film

Monday, November 2, 1998, 5:30 pm, Room Hall A

Session: Thin Films Poster Session
Presenter: T.-G. Kim, Miryang National University, South Korea
Authors: S.-H. Kim, Silla University, South Korea
I.T. Han, Samsung Advanced Institute of Technology, South Korea
T.-G. Kim, Miryang National University, South Korea
Correspondent: Click to Email
Thick diamond film having 700 µm thickness was deposited on polycrystalline molybdenum (Mo) substrate using high power (4 kW) microwave plasma-enhanced chemical vapor deposition (MPECVD) system. We could achieve free-standing diamond film by detaching as-deposited diamond film from the substrate. Parallel-type diamond photoconductors were fabricated on either the growth side or the susbtrate side of free-standing diamond film via ohmic contact metallization. We investigated the variation of photoconductivity after exposing the film surface to either oxygen or hydrogen plasma. At as-grown state, the growth side showed noticeable photoconductivity, while the substrate side gave little photoconductivity, The oxygen plasma treatment of these sides led to the insulators. After exposing the film surfaces to hydrogen plasma, on the other hand, we could observe not only distinct photoconductivity at the substrate side but also the reappearing of photoconductivity at the growth side. Finally, we suggest that the dangling hydrogen bond on the film surface may play an important role to create the photoconductivity of this film surface.