AVS 45th International Symposium
    Thin Films Division Monday Sessions
       Session TF-MoP

Paper TF-MoP20
A Study of the Effect of Low Dielectric Constant PAE-2 by Plasma Treatment

Monday, November 2, 1998, 5:30 pm, Room Hall A

Session: Thin Films Poster Session
Presenter: M.F. Chou, National Chiao Tung University, Republic of China
Authors: T.C. Chang, National Nano Device Laboratory, Republic of China
M.F. Chou, National Chiao Tung University, Republic of China
T.W. Hsiao, National Yun-Lin University, Republic of China
J.Y. Lin, National Yun-Lin University, Republic of China
C.Y. Chang, National Chiao Tung University, Republic of China
M.S.K. Chen, Air Product Company, Republic of China
A. Tuan, Air Product Company, Republic of China
S. Chou, San Fu Company, Republic of China
Correspondent: Click to Email
As the device dimensions continue to shrink to 0.25um and below, the interconnect delay becomes a limiting device factor and increases device speed. Integrating a low dielectric constant ILD into device is a way to reduce the interconnect delay time constant. Low density material such as PAE-2 can offer lower dielectric constant than conventional silicon dioxide insulator. The PAE-2 film has the functional groups with oxygen linkage, so an oxidative post treatment could enhance the properties of PAE-2 film. In this work, we study the effect of post-plasma treatment of PAE-2 film characteristics. The dielectric constant of PAE-2 film is found to be reduced with the application of O@sub 2@ plasma treatment. Also, the optimized condition of O@sub 2@ plasma treatment is obtained. A model is proposed to explain the effect of post-plasma treatment in PAE-2 film.