AVS 45th International Symposium
    Thin Films Division Monday Sessions
       Session TF-MoP

Paper TF-MoP16
Target Compound Layer Formation during Reactive Sputtering

Monday, November 2, 1998, 5:30 pm, Room Hall A

Session: Thin Films Poster Session
Presenter: L.B. Jonsson, Uppsala University, Sweden
Authors: L.B. Jonsson, Uppsala University, Sweden
T. Nyberg, Uppsala University, Sweden
S. Berg, Uppsala University, Sweden
Correspondent: Click to Email
It is well known that a compound layer may form at the target surface during reactive sputtering. However, the significance of this layer for the response to a change in target conditions has so far not been carefully investigated. The standard model for the reactive sputtering process @footnote 1@ does not allow for calculations of the compound thickness at the target surface. For simplicity it has been assumed that a single monolayer is responsible for the poisoning of the target. However, experiments clearly indicate that the compound layer thickness may be significantly thicker than one monolayer. For several reasons it is important to be able to quantify the thickness of this layer. The formation of the compound layer introduces memory effects into the system when the processing conditions are changed. The delay time for sputter erosion of the compound layer depends strongly on the thickness of the layer. We will present an extension of the basic reactive sputtering model that explains the formation of an arbitrary thickness of the compound layer at the target surface. From this model it is possible to examine the layer thickness dependence on the major processing parameters (reactive gas supply, sputtering power etc.). Optical emission spectroscopy studies of sputtered target material and transient target voltage response measurements confirm the validity of the new model. @FootnoteText@ @footnote 1@ S. Berg, H.-O. Blom, T. Larsson, and C. Nender, J. Vac. Sci Technol. A 5, 202- 207 (1987).