| AVS 54th International Symposium | |
| Plasma Science and Technology | Tuesday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| PS-TuP1 Selective Etching of SiO2 over Si3N4 in Triple Frequency Capacitively Coupled Plasma System H.-G. Lee, S.-O. Lee, M.-S. Lee, S.-H. Cho, S.-K. Lee, S.-C. Moon, J.-W. Kim, HYNIX Semiconductor Inc., Republic of Korea |
| PS-TuP2 Etching Characteristics of V2O5 Thin Films using by Cl2/Ar Inductively Coupled Plasma C.M. Kang, C.I. Kim, Chungang University, Korea |
| PS-TuP3 Advanced Gate Stack Processes for sub-70nm CMOS Technology G.H. Kim, K.T. Kim, C.I. Kim, Chung-Ang University, Korea |
| PS-TuP4 Etching Characteristics of High-k Dielectric Materials in Inductively Coupled Ar/CF4/C4F8 Plasma S.W. Kim, B.J. Park, Sungkyunkwan University, Korea, S.-K. Kang, SKKU Advanced Institute of Nano Technology, Korea, K.S. Min, S.D. Park, G.Y. Yeom, Sungkyunkwan University, Korea |
| PS-TuP5 The Etching Mechanism of Zinc Oxide Thin Films for Optoelectronics Device Application using Inductively Coupled Plasma J.C. Woo, K.T. Kim, G.H. Kim, C.I. Kim, Chung-Ang University, Korea |
| PS-TuP6 Study of the Amorphous Silicon Etching using Pin to Plate Dielectric Barrier Discharge in Atmospheric Pressure Plasma S.J. Kyung, J.B. Park, J.H. Lee, G.Y. Yeom, Sungkyunkwan University, Korea |
| PS-TuP7 Effect of Gate Processing on Line edge Roughness in 45nm P.K. Subramanian, I. Matthew, T. Wallow, Advanced Micro Devices, L. Tsou, IBM Corporation |
| PS-TuP8 Directional Oxidation of Silicon Trench in Surface Wave Oxygen Negative Ion Plasma H. Shindo, T. Mitomi, M. Suzuki, K. Kusaba, Tokai University, Japan |
| PS-TuP9 Dry Etching Technology of Cobalt Silicide for sub-60nm Gate Patterning using ICP Source with High Temperature ESC H. Lee, Samsung Electronics, Korea, J.I. Shin, H.S. Lee, Applied Materials, D.H. Kim, Samsung Electronics, Korea, T.W. Kim, Applied Materials, K. Shin, M.C. Kim, G.J. Min, C.J. Kang, J.T. Moon, Samsung Electronics, Korea |
| PS-TuP10 Stripe and Hole Shape Contacts Etch for Power Amplifier BICMOS Devices J.P. Oddou, D. Ristoiu, J. Mourier, STMicroelectronics, France |
| PS-TuP11 Sidewall Passivation Effect during C4F8 + N2 Etch Process for SiOCH Low-k Films S.-K. Yang, H.-S. Yoo, Inha University, Korea, H.-Y. Song, Samsung Electro-Mechanics Co. LTD., Korea, J.-G. Lee, Bucheon College, Korea, S.-G. Lee, B.-H. O, I.-H. Lee, S.-G. Park, Inha University, Korea |
| PS-TuP12 Critical Dimension Shrink and Control with Different Frequency Source Powers in Dielectric Etch Chamber for 45nm Technology and Beyond J. Wang, Applied Materials |
| PS-TuP13 Analysis of High Aspect Ratio Contact Etch using High Flow Concept S.-J. Park, S.-C. Park, Y.-J. Kim, W.-S. Han, Samsung Electronics Co. Ltd., Korea |
| PS-TuP14 Improvement of Sputter Deposited Mo-based Barrier Films by Insertion of a Thin Al Interlayer for Copper Metallization P. Majumder, C.G. Takoudis, University of Illinois at Chicago |
| PS-TuP15 Ar Ion and Ammonia Modification of OSG Surfaces: A Novel Route to Nanoscale Diffusion Barriers J. Wilks, J.A. Kelber, University of North Texas |
| PS-TuP16 Size Distribution Factor of Platinum Nanoparticles Synthesized by Plasma in Aqueous Solution T. Nishigaki, T. Ishizaki, N. Saito, O. Takai, Nagoya University, Japan |
| PS-TuP17 Effects of Ions and Radicals on the Growth of Single-Walled Carbon Nanotubes Produced by Diffusion-Plasma CVD T. Kato, R. Hatakeyama, Tohoku University, Japan |
| PS-TuP18 Structure and Properties of Tungsten Carbide / Amorphous Hydrogenated Carbon Composite Films Prepared by Plasma Immersion Ion Immersion and Deposition M. Xu, Shanghai Jiaotong University and City University of Hong Kong, Z.W. Wu, S.H. Pu, City University of Hong Kong, X. Cai, Shanghai Jiaotong University, Hong Kong, P.K. Chu, City University of Hong Kong |
| PS-TuP20 Effect of Multi-polar Magnetic Field on Properties of Nano-crystalline Silicon Thin Film Deposited by Large-area Internal ICP-PECVD H.B. Kim, H.C. Lee, K.N. Kim, G.Y. Yeom, Sungkyunkwan University, Korea |
| PS-TuP21 Study on Plasma Assisted Metal-Organic Chemical Vapor Deposition of Ti(C,N) and Zr(C,N) Thin Films and In-Situ Plasma Diagnostics with Optical Emission Spectroscopy J.-H. Boo, C.-K. Jung, D.C. Lim, M.C. Kim, S.J. Cho, J.G. Han, Sungkyunkwan University, Korea |