AVS 54th International Symposium | |
Plasma Science and Technology | Tuesday Sessions |
Session PS-TuP |
Session: | Plasma Science and Technology Poster Session |
Presenter: | C.M. Kang, Chungang University, Korea |
Authors: | C.M. Kang, Chungang University, Korea C.I. Kim, Chungang University, Korea |
Correspondent: | Click to Email |
Recently, the technology of microelectronic systems has attracted global attention for applications such as medical devices, communication systems, sensors and actuators. Vanadium oxide has a high capacity for ion storage, it is stable under a cyclic voltage and provides a particular (mixed) type of coloration complementary to that exhibited by the tungsten oxide (WO3), allowing the production of high performances smart windows. Also vanadium oxides, with unique characteristic structures, comprise a particularly interesting group of inorganic 3d-transition metal oxide compounds due to their diverse, electronic, opto-electronic, electrochromic, and magnetic properties, which makes them potential candidates for important technological applications. Research and development of V2O5 have been rapidly accelerated to improve materials for the last decades. But, etch properties of V2O5 have not established yet. In this study, we investigated etch characteristics of dry etching of the V2O5 thin films in the inductively coupled plasma etch system with (Cl2/Ar) gas mixture. The etching characteristics of V2O5 thin films were investigated in terms of etch rates and selectivity as a function of (Cl2/Ar) gas mixing ratio, rf power, dc bias voltage and chamber pressure. The chemical states on the etched surface were investigated with x-ray photoelectron spectroscopy (XPS). Scanning electron microscopy (SEM) was used to investigate the etching profile.