| AVS 54th International Symposium | |
| Plasma Science and Technology | Tuesday Sessions |
| Session PS-TuP |
| Session: | Plasma Science and Technology Poster Session |
| Presenter: | S.J. Cho, Sungkyunkwan University, Korea |
| Authors: | J.-H. Boo, Sungkyunkwan University, Korea C.-K. Jung, Sungkyunkwan University, Korea D.C. Lim, Sungkyunkwan University, Korea M.C. Kim, Sungkyunkwan University, Korea S.J. Cho, Sungkyunkwan University, Korea J.G. Han, Sungkyunkwan University, Korea |
| Correspondent: | Click to Email |
Ti(C,N), Zr(C,N) films were synthesized by pulsed D.C. plasma assisted metalorganic chemical vapor deposition (PA-MOCVD) using metal-organic compounds of tetrakis diethylamido titanium and tetrakis diethylamido zirconium at 200 °C to 300 °C. H2 and He+H2 gases were used as the carrier gases to compare plasma parameter. The effect of N2 and NH3 gases as reactive gas was also evaluated in reduction of C content of the films. Radical formation and ionization behaviors in plasma were analyzed by optical emission spectroscopy (OES) at various pulsed bias and gas conditions. He and H2 mixture as carrier gas was very effective in enhancing ionization of radicals, especially N2 resulting is high hardness. However, NH3 as reactive gas highly reduced the formation of CN radical, there by decreasing C content of Ti(C,N) and Zr(C,N) films in a great deal. The hardness of film is obtained to be 1400 HK to 1700 HK depending on gas species and bias voltage. Higher hardness can be obtained for H2 and N2 gas atmosphere and bias voltage of 600 V. Plasma surface cleaning using N2 gas prior to deposition appeared to increase adhesion of films on cold forming steel. The changes of plasma including radicals and film properties are illustrated in terms of carrier and reactive gases as well as pulsed power variation.
Keywords: Ti(C,N) and Zr(C,N) films, Low temperature pulse DC-PAMOCVD, Optical emission spectroscopy, High hardness