| AVS 54th International Symposium | |
| Plasma Science and Technology | Tuesday Sessions |
| Session PS-TuP |
| Session: | Plasma Science and Technology Poster Session |
| Presenter: | H.-G. Lee, HYNIX Semiconductor Inc., Republic of Korea |
| Authors: | H.-G. Lee, HYNIX Semiconductor Inc., Republic of Korea S.-O. Lee, HYNIX Semiconductor Inc., Republic of Korea M.-S. Lee, HYNIX Semiconductor Inc., Republic of Korea S.-H. Cho, HYNIX Semiconductor Inc., Republic of Korea S.-K. Lee, HYNIX Semiconductor Inc., Republic of Korea S.-C. Moon, HYNIX Semiconductor Inc., Republic of Korea J.-W. Kim, HYNIX Semiconductor Inc., Republic of Korea |
| Correspondent: | Click to Email |
It has been reported that the triple frequency (60MHz, 27MHz, 2MHz) capacitively coupled plasma (CCP) system provides more advanced process performance and wider process window for etching dielectric films compared to conventional dual frequncy (60MHz, 2MHz) CCP system. In this study, the effect of triple frequency with the bottom electrode in C4F6/O2/Ar gas plasma on the selective etching of SiO2 over Si3N4 is considered as a function of the power applied to each frequencies. To understand the characteristics of triple frequncy concerning etch selectivity of SiO2 over Si3N4, we considered the chemical species such as CF2 radicals and other radicals that have influence on polymerization using optical emission spectroscopy (OES). The thickness of deposited polymers and components in this triple frequency CCP system were investigated by high resolution transmission electron microscopy (HR-TEM) and X-ray photoelectron spectroscopy (XPS).