| AVS 54th International Symposium | |
| Plasma Science and Technology | Tuesday Sessions |
| Session PS-TuP |
| Session: | Plasma Science and Technology Poster Session |
| Presenter: | S.W. Kim, Sungkyunkwan University, Korea |
| Authors: | S.W. Kim, Sungkyunkwan University, Korea B.J. Park, Sungkyunkwan University, Korea S.-K. Kang, SKKU Advanced Institute of Nano Technology, Korea K.S. Min, Sungkyunkwan University, Korea S.D. Park, Sungkyunkwan University, Korea G.Y. Yeom, Sungkyunkwan University, Korea |
| Correspondent: | Click to Email |
For the next generation metal oxide semiconductor field effect transistor (MOSFET), high-k materials such as HfO2, ZrO2, BST, etc. are required as gate dielectric materials which replace SiO2/Si3N4. To apply these high-k materials to the next generation devices, the etch characteristics needs to be satisfied in addition to the adequate materials characteristics. For these materials, precise etch rate is required instead of high etch rate due to the low thickness of the material and extremely high etch selectivity over underlayer material is required. Also, no damage or residue remaining on the etched surface is tolerable. In this study, the etch characteristics of high-k materials such as HfO2 and ZrO2 were investigated as a function of gas mixture composed of Ar/CF4/C4F8 using an inductively coupled plasma etcher, and the effect of gas mixture on the etch rate, etch selectivity to silicon, the remaining C-F polymer on the silicon surface, and the damage to the MOSFET device were investigated. In the presentation, the change of materials physical, chemical, and electrical properties etched by Ar/CF4/C4F8 using an inductively coupled plasma etcher will be shown in details with the properties of MOSFET devices fabricated by Ar/CF4/C4F8 ICP.