| AVS 54th International Symposium | |
| Plasma Science and Technology | Tuesday Sessions |
| Session PS-TuP |
| Session: | Plasma Science and Technology Poster Session |
| Presenter: | S.-K. Yang, Inha University, Korea |
| Authors: | S.-K. Yang, Inha University, Korea H.-S. Yoo, Inha University, Korea H.-Y. Song, Samsung Electro-Mechanics Co. LTD., Korea J.-G. Lee, Bucheon College, Korea S.-G. Lee, Inha University, Korea B.-H. O, Inha University, Korea I.-H. Lee, Inha University, Korea S.-G. Park, Inha University, Korea |
| Correspondent: | Click to Email |
Plasma induced damage to low k dielectric layer is one of key issues in developing the multi-level interconnection technology based on Copper and low k dielectrics. Change in chemical bonds and contents of carbon or fluoride often results in higher dielectric constant. In this work, etching of SiOCH low k films was studied by C4F8 + N2 plasma in Inductively coupled plasma etcher. X-ray photoelectron spectroscopy showed C-F and C-N bondings on the sidewall of patterned low k dielectric layer, which indicated the formation of passivation film. This passivation layer remained after photoresist removal by N2 plasma and even after dipping in 1% HF solution. It is shown that patterning of SiOCH layer by C4F8 + N2 plasma caused the increase in dielectric constant k by forming C-F passivation films.