| AVS 54th International Symposium | |
| Plasma Science and Technology | Tuesday Sessions |
| Session PS-TuP |
| Session: | Plasma Science and Technology Poster Session |
| Presenter: | S.J. Kyung, Sungkyunkwan University, Korea |
| Authors: | S.J. Kyung, Sungkyunkwan University, Korea J.B. Park, Sungkyunkwan University, Korea J.H. Lee, Sungkyunkwan University, Korea G.Y. Yeom, Sungkyunkwan University, Korea |
| Correspondent: | Click to Email |
In this study, atmospheric pressure plasmas were generated with a modified dielectric barrier discharge (pin-to-plate DBD) having the power electrode composed of multi-pins instead of a conventional blank planar plate and their characteristics of discharge were investigated. The effect of CF4 in the N2/NF3 gas mixture on the characteristics of the pin to plate dielectric barrier discharge (DBD) having the size of 170 x 100 mm have been investigated for the application to thin film transistor liquid crystal display (TFT-LCD) processing such as amorphous silicon(a:Si) and silicon nitride(Si3N4) etching. The result showed that the selectivity of a:Si/ Si3N4) was increased with CF4 flow rate in N2/ NF3 up to 250 sccm, however, the further increase of CF4 flow rate decreased the selectivity of a:Si/ Si3N4). A maximum etch rate of a:Si of 110 nm/sec with the selectivity of a:Si/ Si3N4) of 5.1 could be obtained with a gas mixture of 250 sccm CF4 in N2 (50 slm)/ NF3 (300 sccm) and at 8.5 kV of AC rms voltage.