| AVS 60th International Symposium and Exhibition | |
| Thin Film | Thursday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| TF-ThP1 Enhancement of Structural, Optical and Electrical Properties through Post-Annealing of N-doped ZnO Thin Films Grown by Reactive Magnetron RF-Sputtering L.A. Hernández-Hernández, ESFM-IPN, Mexico, A. Hernández-Hernández, CINVESTAV-IPN, Mexico, F. De Moure-Flores, UAQ, Mexico, J.S. Arias-Cerón, CINVESTAV-IPN, Mexico, J.G. Quiñones-Galván, ININ, Mexico, J. Aguilar-Hernández, G. Contreras-Puente, ESFM-IPN, Mexico, M. Meléndez-Lira, CINVESTAV-IPN, Mexico |
| TF-ThP2 Fabrication of Sub-micron Structure by Thermal Lithography Technology with GSSO Thin Films C.M. Chang, National Taiwan University, Taiwan, Republic of China, D. Chiang, M.H. Shiao, P.L. Chen, M.J. Huang, National Applied Research Laboratories, Taiwan, Republic of China, W.J. Hsueh, National Taiwan University, Taiwan, Republic of China |
| TF-ThP4 Titanium-Aluminum Oxynitride (TAON) as New Gate Dielectric for 3D MOS Technology J. Miyoshi, J.A. Diniz, A.R. da Silva, I. Doi, Universidade Estadual de Campinas, Brazil |
| TF-ThP5 Influence of Microstructure, Surface Morphology and Optical Properties of the WO3C Film by DC Reactive Magnetron Sputtering C.-T. Lee, D. Chiang, C.-Y. Su, ITRC, NARL, Taiwan, Republic of China, M.-C. Liu, C.-C. Jaing, Minghsin University of Science and Technology, Taiwan, Republic of China |
| TF-ThP6 Fabrication of Al2O3 Gate pH-ISFET for Continuous Monitoring S.K. Lee, W.H. Son, S.H. Lee, Y.S. Moon, T.Y. Lee, S.Y. Choi, Kyungpook National University, Republic of Korea |
| TF-ThP8 Effect of Tungsten Incorporation on the Structure and Optical Properties of β-Gallium Oxide Thin Films E.J. Rubio, C.V. Ramana, The University of Texas at El Paso |
| TF-ThP9 Effect of Growth Temperature and Post-Deposition Annealing on the Structure and Optical Properties of Yttrium Oxide Thin Films C.V. Ramana, L. Sanchez, University of Texas at El Paso, V. Atuchin, A.V. Rzhanov Institute of Semiconductor Physics, Russian Federation, V.N. Kruchinin, Institute of Semiconductor Physics, Russian Federation, I.P. Prosvirin, Boreskov Institute of Catalysis, Russian Federation |
| TF-ThP10 Fabrication and Electrical Properties of Nanocrystalline Yttrium-Doped Hafnium Oxide Thin Film Capacitors A. Kongu, University of Texas at El Paso, S. McPeak, S. Kotru, The University of Alabama, C.V. Ramana, University of Texas at El Paso |
| TF-ThP11 Electrochemical Corrosion of Thin Ferromagnetic Fe-N Films in Neutral Solution S.S. Maklakov, S.A. Maklakov, A.S. Naboko, I.A. Ryzhikov, Institute for Theoretical and Applied Electromagnetics, Russian Federation |
| TF-ThP12 Chemical Bonding in Silicon Nitride Films Deposited with SiH4/N2 by Very High Frequency Plasma-Enhanced Chemical Vapor Deposition S. Kobayashi, Tokyo Polytechnic University, Japan |
| TF-ThP13 Optical and Structural Properties of GaN Thin Films as Grown by Closed-Space Vapor Transport L.A. Hernández-Hernández, J. Aguilar-Hernández, F. De Moure-Flores, A. Escamilla-Esquivel, ESFM-IPN, Mexico, M. López-López, CINVESTAV-IPN, Mexico, G. Santana-Rodríguez, IIM-UNAM, Mexico, M. Meléndez-Lira, A. Hernández-Hernández, CINVESTAV-IPN, Mexico, J.G. Quiñones-Galván, ININ, Mexico, O. De Melo-Pereira, UH, Cuba, G. Contreras-Puente, ESFM-IPN, Mexico |
| TF-ThP15 Patterning of Nonwoven Fiber Mats by Atomic Layer Deposition W.J. Sweet, C.J. Oldham, G.N. Parsons, North Carolina State University |
| TF-ThP16 Low Temperature Plasma-assisted Atomic Layer Deposition of Copper Studied using In Situ Reflection-Adsorption Infrared Spectroscopy S. Agarwal, R.P. Chaukulkar, Colorado School of Mines, N.F.W. Thissen, Eindhoven University of Technology, Netherlands, V.R. Rai, Colorado School of Mines |
| TF-ThP17 Mo/Si Multilayer Film with 4 nm Bandwidth for EUV Mirrors by RF Magnetron Sputtering C.-T. Lee, Y.-C. Yeh, W.-H. Cho, H.-P. Chen, P.-K. Chiu, C.-N. Hsiao, ITRC, NARL, Taiwan, Republic of China, S.W. Lin, P.-J. Wu, National Synchrotron Radiation Research Center |
| TF-ThP18 Thin-Film and Crystalline Properties of Silicon Deposited Using a Novel, Low-Damage, Surface Wave Plasma Source P.S. Zonooz, J. Peck, D. Curreli, D.N. Ruzic, University of Illinois at Urbana Champaign, M. Reilly, B. Jurczyk, R. Stubbers, Starfire Industries, LLC |
| TF-ThP19 Ar+ Ion Sputter Processing of Monolayer MoS2 Films Q. Ma, P.M. Odenthal, J. Mann, C.S. Wang, Y. Zhu, University of California, Riverside, D. Sun, Columbia University, T. Chen, K. Yamaguchi, T. Tran, M. Wurch, J.L. McKinley, M. Isarraraz, K. Magnone, University of California, Riverside, T.F. Heinz, Columbia University, R. Kawakami, L. Bartels, University of California, Riverside |
| TF-ThP20 Atomically Thin Molybdenum Sulphoselenide Films with Tunable Band Gaps J. Mann, E. Preciado, V. Klee, K. Yamaguchi, S. Bobek, M. Isarraraz, D. Barroso, A. Nguyen, E. Bonilla, S. Naghibi, M. Wurch, L. Bartels, University of California, Riverside |
| TF-ThP21 Optimization of Diamond-Like Carbon (DLC) Films as Anti-Reflection Coatings R. Takahashi, T. Akutsu, National Astronomical Observatory of Japan, Y. Saito, High Energy Accelerator Research Organization, Japan, N. Sakamoto, ICS Corporation, Japan |
| TF-ThP22 Fabrication of Distributed C60 Molecules Reinforced Al Nano-composite Thin Films and Their Mechanical Properties A.M. Matsumuro, Aichi Institute of Techonology, Japan |
| TF-ThP23 Plasma Polymerization of the Inner Wall of a Long, Narrow Tube under Atmospheric Pressure T.H. Lin, Y.J. Yang, C.C. Wang, C.C. Hsu, National Taiwan University, Taiwan, Republic of China |
| TF-ThP24 Vapor Phase Polymerization onto Liquid Substrates L.C. Bradley, M. Gupta, University of Southern California |
| TF-ThP25 Performance of WSe2 Thin Film Photovoltaic Devices as Determined by Numerical Modeling H. Kyureghian, J.D. Banninga, N.J. Ianno, R.J. Soukup, University of Nebraska-Lincoln |
| TF-ThP27 Passivation Effect of MPTMS Monolayer for Ag Thin Films M. Kawamura, T. Hirose, Y. Abe, KH. Kim, Kitami Institute of Technology, Japan |
| TF-ThP28 Photoluminescence Characterization of Polythiophene Doped with Metallophthalocyanines whose Central Metals Contain 3d, 4d and 5d Electrons H. Kobe, R. Sakamoto, H. Kato, S. Takemura, k. Shimada, T. Hiramatsu, K. Matsui, Kanto Gakuin University, Japan |
| TF-ThP30 Chemical Composition on the Top of a Surface Characterized with the Evolution of Surface States D. Luh, National Central University, Taiwan, Republic of China |
| TF-ThP34 Combinatorial ALD to Accelerate Integration of New Materials for Nanomanufacturing F. Greer, W. Zhu, E. Adhiprakasha, R. Limdulpaiboon, J. Watanabe, C. Lang, Intermolecular, Inc. |
| TF-ThP35 The Effect of BN Coating on the Hydrogen Permeation through Stainless Steel M. Tamura, The University of Electro-Communications, Japan |
| TF-ThP38 Development and Application of Novel Precursors for Atomic Layer Deposition T.M. Chung, Korea Research Institute of Chemical Technology, Republic of Korea, B.K. Park, D.J. Deon, S.S. Lee, K.-S. An, C.G. Kim, Korea Research Institute of Chemical Technology, Republic of Korea |