| AVS 60th International Symposium and Exhibition | |
| Thin Film | Thursday Sessions |
| Session TF-ThP |
| Session: | Thin Films Poster Session |
| Presenter: | C.M. Chang, National Taiwan University, Taiwan, Republic of China |
| Authors: | C.M. Chang, National Taiwan University, Taiwan, Republic of China D. Chiang, National Applied Research Laboratories, Taiwan, Republic of China M.H. Shiao, National Applied Research Laboratories, Taiwan, Republic of China P.L. Chen, National Applied Research Laboratories, Taiwan, Republic of China M.J. Huang, National Applied Research Laboratories, Taiwan, Republic of China W.J. Hsueh, National Taiwan University, Taiwan, Republic of China |
| Correspondent: | Click to Email |
In this study, sub-micron structures of hole and line patterns on 4-inch silicon wafer were fabricated by thermal lithography technique using the wavelength of 405 nm laser. Fixed thickness of 80 nm of Quaternary Materials of Ge-Sb-Sn-O (GSSO)thin films were deposited on silicon wafer and glass substrate by magnetron sputter deposition system. The oxygen flow rate ranged from 0 SCCM to 15 SCCM of the sputter deposition process under working pressures of 10 mTorr were studied on the GSSO thin film optical properties of transmittance (T), reflectance (R), absorption (A). Besides, the extinction coefficient (k) of GSSO thin film was controlled between 0.35-1. Furthermore the hole and line structures were made on the GSSO surface with two different laser power ranges of 0.08 mW - 0.3 mW and 0.44mW - 0.88 mW, respectively. The silicon wafer substrate was immersed in Tetramethyl ammonium hydroxide (N(CH3)4OH) solution of 2.38 wt% for 30 seconds.
From the experimental results, it can be found that the depth and sidewall shape of the structure were varied with the extinction coefficient (k) of GSSO thin film and the laser power. The diameter of hole and line width of line structures were varied proportional to the extinction coefficient of GSSO thin film when the laser power was fixed at 0.18 mW and 0.66 mW, respectively. When the oxygen flow rate of 0 SCCM, the laser lithography process is unable to produce a pattern on the GSSO thin film surface since it resulted a pure metal thin film. When the oxygen flow rate increases, and the extinction coefficient GSSO thin film is decrease. When the extinction coefficient of GSSO thin film was fixed at 0.4, the V shape was presented in the hole and line structures when the laser powers were less than 0.13 mW and 0.44 mW, respectively. Besides, the structure presented as U shape when the laser power was higher than 0.18 mW for hole structure and 0.66 mW for line structure which the extinction coefficient of GSSO thin film was greater than 0.65. Finally the diameter and line width of two structures can be controlled between 350-700 nm, and the sidewall angle greater than 8 0° can be produced under suitable processing parameters.