| AVS 60th International Symposium and Exhibition | |
| Thin Film | Thursday Sessions |
| Session TF-ThP |
| Session: | Thin Films Poster Session |
| Presenter: | J. Mann, University of California, Riverside |
| Authors: | J. Mann, University of California, Riverside E. Preciado, University of California, Riverside V. Klee, University of California, Riverside K. Yamaguchi, University of California, Riverside S. Bobek, University of California, Riverside M. Isarraraz, University of California, Riverside D. Barroso, University of California, Riverside A. Nguyen, University of California, Riverside E. Bonilla, University of California, Riverside S. Naghibi, University of California, Riverside M. Wurch, University of California, Riverside L. Bartels, University of California, Riverside |
| Correspondent: | Click to Email |
We demonstrate the growth of atomically thin (mono to few layer) alloys of Molybdenum Sulphoselenide films with the use of organic sulfur and organic selenium precursors. Changing the ratio of these precursors allows us to tune the value of the band gap continuously between 1.87 eV and 1.54 eV, the band gaps of MoS2 and MoSe2, respectively. Our growth technique yields mm scale films on SiO2/Si (300 nm oxide layer) substrates. The films are characterized with Raman spectroscopy, X-ray photoelectron spectroscopy, photoluminescence measurements, and atomic force microscopy