AVS 60th International Symposium and Exhibition
    Thin Film Thursday Sessions
       Session TF-ThP

Paper TF-ThP4
Titanium-Aluminum Oxynitride (TAON) as New Gate Dielectric for 3D MOS Technology

Thursday, October 31, 2013, 6:00 pm, Room Hall B

Session: Thin Films Poster Session
Presenter: J. Miyoshi, Universidade Estadual de Campinas, Brazil
Authors: J. Miyoshi, Universidade Estadual de Campinas, Brazil
J.A. Diniz, Universidade Estadual de Campinas, Brazil
A.R. da Silva, Universidade Estadual de Campinas, Brazil
I. Doi, Universidade Estadual de Campinas, Brazil
Correspondent: Click to Email
The next generation of CMOS technology requires gate insulators with dielectric constant higher than 40, resulting in an Equivalent Oxide Thickness (EOT) thinner than 1 nm. Titanium-aluminum oxynitride (TAON) has been used as high-k gate dielectric for planar MOS devices. Thus, planar MOS capacitor and transistors were fabricated and characterized by TEM and EDS analyses, and C-V and I-V measurements, and the results have confirmed that these films can be used as gate dielectric for planar MOS technology. But, for future 3D device technology application, these films have been not investigated. So, 3D MOS capacitors with Al/TAON/Si (as control sample) and TiN/TAON/Si gate structures for 3D technology were fabricated. Al/TAON and TiN/TAON layers on 3D gate region must present conformal coverage, which is mandatory requirement for 3D transistors, such as FinFET. In this work, Titanium-aluminum oxynitride (TAON) were fabricated by 0.75 Titanium (Ti) and 0.25 Aluminum (Al) subsequently deposition by vacuum e-beam evaporation of 99.9999% of Ti and Al metals, respectively, without any substrate heating. The evaporation pressure was 3.10-8 Torr, and the Ti and Al evaporation rates were of 0.1 nm.s-1. ECR plasma oxynitridation process was carried out at different O2/N2/Ar flow ratios (3:10:20 sccm). Physical characteristics of this MoS structure by ellipsometry and x-ray photoelectron spectroscopy (XPS) were performed to confirm the physical film thickness and define the composition of the film. C-V curves of these structures were performed at 1 MHz.