AVS 60th International Symposium and Exhibition
    Thin Film Thursday Sessions
       Session TF-ThP

Paper TF-ThP19
Ar+ Ion Sputter Processing of Monolayer MoS2 Films

Thursday, October 31, 2013, 6:00 pm, Room Hall B

Session: Thin Films Poster Session
Presenter: Q. Ma, University of California, Riverside
Authors: Q. Ma, University of California, Riverside
P.M. Odenthal, University of California, Riverside
J. Mann, University of California, Riverside
C.S. Wang, University of California, Riverside
Y. Zhu, University of California, Riverside
D. Sun, Columbia University
T. Chen, University of California, Riverside
K. Yamaguchi, University of California, Riverside
T. Tran, University of California, Riverside
M. Wurch, University of California, Riverside
J.L. McKinley, University of California, Riverside
M. Isarraraz, University of California, Riverside
K. Magnone, University of California, Riverside
T.F. Heinz, Columbia University
R. Kawakami, University of California, Riverside
L. Bartels, University of California, Riverside
Correspondent: Click to Email
Low-energy Argon sputtering can selectively reduce the Sulfur contents of single-layer MoS2 films while not removing Molybdenum, as shown by XPS analysis. Even after removing ¼ of the total S, the Mo 3d states’ XPS features remain virtually unchanged and sharp, suggesting that the Mo oxidation states are unchanged and that widespread reconstruction of the film does not take place. Concurrent measurement of the PL yield shows a rapid decay of the PL signal independent of the substrate temperature between 175 and 300K. A basic model describes the data near quantitatively and suggests very short exciton diffusion lengths.