| AVS 60th International Symposium and Exhibition | |
| Thin Film | Thursday Sessions |
| Session TF-ThP |
| Session: | Thin Films Poster Session |
| Presenter: | J. Aguilar-Hernández, ESFM-IPN, Mexico |
| Authors: | L.A. Hernández-Hernández, ESFM-IPN, Mexico J. Aguilar-Hernández, ESFM-IPN, Mexico F. De Moure-Flores, ESFM-IPN, Mexico A. Escamilla-Esquivel, ESFM-IPN, Mexico M. López-López, CINVESTAV-IPN, Mexico G. Santana-Rodríguez, IIM-UNAM, Mexico M. Meléndez-Lira, CINVESTAV-IPN, Mexico A. Hernández-Hernández, CINVESTAV-IPN, Mexico J.G. Quiñones-Galván, ININ, Mexico O. De Melo-Pereira, UH, Cuba G. Contreras-Puente, ESFM-IPN, Mexico |
| Correspondent: | Click to Email |
We report in this work the structural and optical properties of GaN films grown by the Closed-Space Vapor Transport (CSVT) technique. The samples were deposited on quartz substrates using GaN powder as the starting material source, which were contained inside a semi-hermetic cell made of graphite in a low pressure atmosphere. We present the characterization carried out by X-Ray Diffraction (XRD), Scanning Electron Microscopy (SEM), Energy Dispersive Spectroscopy (EDS) and Photoluminescence (PL) measurements. XRD results exhibit the growth of low quality hexagonal GaN, while SEM image shows GaN clusters over the entire substrates surface. Concerning EDS measurements they indicated that non-stoichiometric GaN films with non-intentional carbon (C) impurification were obtained. Finally, PL measurements under UV excitation (He:Cd laser λ=325 nm), present PL emission at room temperature. We observed the presence of different emission bands in the visible region: the yellow (YL) at 2.20 eV and the blue (BL) at 2.7-3.0 eV bands are related to undoped and C-doped GaN, while, the green (GL-2) band at 2.36 eV is related to Ga-rich GaN.
† : partially funded by CONACyT-SENER, ICyTDF and DGAPA-UNAM PAPIIT.