AVS 60th International Symposium and Exhibition
    Thin Film Thursday Sessions
       Session TF-ThP

Paper TF-ThP38
Development and Application of Novel Precursors for Atomic Layer Deposition

Thursday, October 31, 2013, 6:00 pm, Room Hall B

Session: Thin Films Poster Session
Presenter: T.M. Chung, Korea Research Institute of Chemical Technology, Republic of Korea
Authors: T.M. Chung, Korea Research Institute of Chemical Technology, Republic of Korea
B.K. Park, Korea Research Institute of Chemical Technology, Republic of Korea
D.J. Deon, Korea Research Institute of Chemical Technology, Republic of Korea
S.S. Lee, Korea Research Institute of Chemical Technology, Republic of Korea
K.-S. An, Korea Research Institute of Chemical Technology, Republic of Korea
C.G. Kim, Korea Research Institute of Chemical Technology, Republic of Korea
Correspondent: email address not available
Advanced electronic industries have highly required novel materials due to the continuous shrinking dimensions of the related devices. The preparation and use of metal compounds as precursors for electronic areas has been extensively focused on application to electronic devices. The systematic development of metal complexes with excellent properties such as thermal stability, volatility, and air sensitivity are highly important in the vacuum deposition field of chemical vapor deposition. Among the properties of metal precursors, volatility is most important in vacuum technology because the transportation of precursor from canister to substrate in chamber is necessary to deposit the metal containing materials. Generally, metal complexes of inorganic ligands such as halides, nitrate, and sulfate are not volatile enough to be used in the vacuum technology although there are some except compounds – titanium tetrachloride, tin tetrachloride, tungsten hexafluoride. Organic ligands attached on the metals afford definite effects to the volatility property of the metal precursors. To improve of the volatile character of metal precursors, various ligands have been applied with preparation of the metal complexes. In this talk, we will discuss the development of a wide variety of metal compounds through molecule level design to be applicable in vacuum deposition technology such as metal organic chemical vapor deposition (MOCVD) and atomic layer deposition (ALD). Recent results on ALD of metal sulfide, metal oxide, and metal using metal precursors such as nickel, tin, ruthenium, and tungsten synthesized in our group will be disclosed.