| AVS 60th International Symposium and Exhibition | |
| Thin Film | Thursday Sessions |
| Session TF-ThP |
| Session: | Thin Films Poster Session |
| Presenter: | L.A. Hernández-Hernández, ESFM-IPN, Mexico |
| Authors: | L.A. Hernández-Hernández, ESFM-IPN, Mexico A. Hernández-Hernández, CINVESTAV-IPN, Mexico F. De Moure-Flores, UAQ, Mexico J.S. Arias-Cerón, CINVESTAV-IPN, Mexico J.G. Quiñones-Galván, ININ, Mexico J. Aguilar-Hernández, ESFM-IPN, Mexico G. Contreras-Puente, ESFM-IPN, Mexico M. Meléndez-Lira, CINVESTAV-IPN, Mexico |
| Correspondent: | Click to Email |
Nitrogen doped zinc oxide thin films were grown on glass and silicon substrates by reactive magnetron RF sputtering of zinc in a N2O–Ar atmosphere, post-annealing treatment of samples was made in a nitrogen reactive atmosphere. We report a comparative study of as-grown and post-annealing treatment of N-doped ZnO thin films properties carried out by structural, optical, electrical and spectroscopic techniques. The characterization measurements allow us to confirm the improvement of crystalline quality, a higher incorporation of N, and the apparition of luminescence emission at room temperature and photoresponse in the visible range due to the post-annealing treatment of the samples.
† : partially funded by CONACyT-Mexico.