| AVS 59th Annual International Symposium and Exhibition | |
| Plasma Science and Technology | Thursday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| PS-ThP1 Plasma Etch Challenges to Produce Metallization-Friendly Profiles at 20nm and Beyond Technology Nodes in the BEOL Y. Mignot, STMicroelectronics, R. Koshy, GLOBALFOUNDRIES, Y. Park, Samsung Electronics Co. Ltd., R. Srivastava, GLOBALFOUNDRIES, E. Soda, Renesas Electronics, Y. Yin, M. Beard, B.G. Morris, IBM Microelectronics, K. Trevino, GLOBALFOUNDRIES, J. Arnold, S. Allen, IBM Microelectronics, C. Labelle, GLOBALFOUNDRIES, M. Sankarapandian, IBM Microelectronics, Y. Loquet, STMicroelectronics, Y. Feurprier, L. Wang, J. Stillahn, Y. Chiba, V. Gizzo, K. Kumar, Tokyo Electron Technology Center, America, LLC, C.A. Wang, Q. Zhang, GLOBALFOUNDRIES, A. Inada, Renesas Electronics, S. Mignot, STMicroelectronics |
| PS-ThP2 A Comparative Study of Plasma-Treated Fluoropolymers at Atmospheric Pressure T. Dufour, J. Hubert, N. Vandencasteele, F. Reniers, Université Libre de Bruxelles, Belgium |
| PS-ThP3 Advances in 2D/3D Feature Profile Simulations P. Moroz, Tokyo Electron US Holdings Ltd |
| PS-ThP4 Laser Thomson Scattering Measurements of Plasma Parameters in the Low Temperature Plasmas J.-H. Kim, Korea Reseach Institute of Standards and Science, Republic of Korea, B.H. Seo, Korea Advanced Institute of Science and Technology, Republic of Korea, S.-J. You, D.J. Seong, Korea Reseach Institute of Standards and Science, Republic of Korea |
| PS-ThP5 Development of a New Plasma Treatment Followed by a Bake for Photoresist Linewidth Roughness Smoothening M. Fouchier, E. Pargon, CNRS/UJF-Grenoble1/CEA LTM, France, L. Azarnouche, ST Microelectronics, France, K. Menguelti, M. Brihoum, CNRS/UJF-Grenoble1/CEA LTM, France |
| PS-ThP6 Analysis of Target Oxidation in Reactive Sputter Deposition Processes of Silicon Dioxide K. Hoshino, K. Demura, S. Tamaya, M. Okamoto, Y. Murakami, Canon Inc, Japan, M. Isobe, T. Ito, K. Karahashi, S. Hamaguchi, Osaka University, Japan |
| PS-ThP7 On the Origin of the Line Width Roughness of Photoresist Patterns after Plasma Exposure R. Ramos, M. Brihoum, K. Menguelti, L. Azarnouche, M. Fouchier, E. Pargon, G. Cunge, O. Joubert, LTM (CNRS / UJF-Grenoble1 / CEA), France |
| PS-ThP8 Effect of Film Properties on Nitride Etching T. Wanifuchi, G. Takaba, H. Ohtake, M. Sasaki, Tokyo Electron Technology Development Institute, INC., Japan |
| PS-ThP9 A DC-RF Magnetized Plasma Source Y. Raitses, I.D. Kaganovich, Princeton Plasma Physics Laboratory |
| PS-ThP10 Quick Estimation of Deposition Rate for a Sputter System G. Ding, Y. Wang, J. Cheng, D. Schweigert, Z. Sun, M. Le, Intermolecular Inc. |
| PS-ThP12 Application of E-beam Curing Technique to EUV Resist Utilizing DC Superimposed Capacitively-Coupled Plasma M. Honda, T. Katsunuma, K. Narishige, Tokyo Electron Miyagi Ltd., Japan, K. Yatsuda, Tokyo Electron Limited, Japan |
| PS-ThP13 SiH4/H2 and CH4 Multi-Hollow Discharge Plasma CVD of SiC Nano-Composite Anode for High Charge-Discharge Capacity Lithium Ion Batteries Y. Morita, Kyushu University, Japan |
| PS-ThP14 Interface Trap Generation by VUV/UV Radiation from Fluorocarbon Plasma M. Fukasawa, Sony Corporation, Japan, Y. Miyawaki, Y. Kondo, K. Takeda, H. Kondo, K. Ishikawa, M. Sekine, Nagoya University, Japan, H. Matsugai, T. Honda, M. Minami, F. Uesawa, Sony Corporation, Japan, M. Hori, Nagoya University, Japan, T. Tatsumi, Sony Corporation, Japan |
| PS-ThP15 Design of a Standalone Plasma Diagnostics Box F.T. Molkenboer, H.H.P.Th. Bekman, F.H. Elferink, T.J. Versloot, E. Te Sligte, N.B. Koster, TNO Technical Sciences, The Netherlands |
| PS-ThP18 A New Compact ICP Source for Neutral and Ion Beam Extraction E. Karakas, V.M. Donnelly, D.J. Economou, University of Houston |
| PS-ThP19 The Role of Ions in the Gas-Surface Interactions of Nitrogen Oxide Plasma Systems J.M. Blechle, M.F. Cuddy, E.R. Fisher, Colorado State University |
| PS-ThP21 Diagnosing Toroidally Confined Pure Electron Plasma using Electrostatic Waves S.A. Exarhos, M.R. Stoneking, J.W. Darrell, Lawrence University |
| PS-ThP22 Diagnostic Studies of Ar/c-C4F8 Plasmas: The Effect of N2-addition on Gas Phase and Surface Kinetics P.K. Kao, Y.J. Yang, National Taiwan University, Taiwan, Republic of China, P.W. Chiou, C.C. Chou, Tokyo Electron Taiwan Limited, Taiwan, Republic of China, C.C. Hsu, National Taiwan University, Taiwan, Republic of China |
| PS-ThP23 Advanced Etch Profile Control and the Impact of Sidewall Angle at SiC Etch for Metal Filling Process H.K. Sung, W.S. Lim, K.W. Lee, S.K. Kim, J.W. Choi, B.O. Lee, H.M. Yoon, Y.S. Lee, M.L. Park, E.A. Cho, J.K. Kim, H.K. Kang, C.G. Ko, Korea Advanced Nano Fab Center, Republic of Korea |
| PS-ThP24 Etching Characteristics of Magnetic Tunnel Junction Layer by using Non-Corrossive Gas Mixtures in ICP System M.H. Jeon, K.N. Kim, H.J. Kim, G.Y. Yeom, Sungkyunkwan University, Republic of Korea |
| PS-ThP25 Evaluation of Surface Chemical Bonding State and Surface Roughness of Chemical Dry Etched Si using NO and F2 Gas Mixture S. Tajima, T. Hayashi, K. Ishikawa, M. Sekine, M. Hori, Nagoya University, Japan |
| PS-ThP26 High K Metal Gate Etching towards sub 14 nm Features S. Barnola, L. Desvoivres, C. Vizioz, CEA, LETI, MINATEC Campus, France, C. Arvet, ST Microelectronics, Crolles, France |
| PS-ThP27 The SiOx Thin Film Deposition by using a Double Discharge System with a HMDS/Ar/He/O2 Gas Composition G.Y. Kim, J.B. Park, G.Y. Yeom, Sungkyunkwan University, Republic of Korea |
| PS-ThP28 The Effect of a Low Plasma-Induced Damage Etching on sub-32nm Metal Gate/High-k Dielectric CMOSFETs Characteristics K.S. Min, S.H. Kang, G.Y. Yeom, Sungkyunkwan University, Republic of Korea |
| PS-ThP29 Catalytic Activities of Metal/Carbon Compound used by Vacuum and Solution Plasma Processes H.S. Lee, M.A. Bratescu, N. Saito, Nagoya University, Japan |
| PS-ThP31 Plasma Etching of PTFE: Differences between Low and Atmospheric Pressure Treatments N. Vandencasteele, J. Hubert, T. Dufour, S. Collette, C. De Vos, F. Reniers, Université Libre de Bruxelles, Belgium |
| PS-ThP32 Surface Modification of Polyethylene Terephthalate using Water Containing He/O2 and Ar/O2 Plasma P. Leroy, S. Abou Rich, S. Colette, F. Reniers, ULB, Belgium |
| PS-ThP33 Numerical Investigation of Optimum Conditions for Magnetic Neutral Loop Discharge Plasma Production S.H. Kim, D. Akbar, J.L. Shohet, University of Wisconsin-Madison, B.N. Moon, W.J. Choi, Y.M. Sung, Kyungsung University, Korea |
| PS-ThP34 No- Residue and High- Rate Etching of InGaAs by High Density Plasma Y. Ohsawa, Tokyo Electron Technology Center, America, LLC, H. Nakajima, T. Nishizuka, M. Takahashi, Tokyo Electron America, Y. Trickett, G. Nakamura, A. Ko, Tokyo Electron Technology Center, America, LLC, H. Ohtake, Tokyo Electron Technology Development Institute, INC., Japan, C. Huffman, R. Hill, SEMATECH |
| PS-ThP35 Using Capillary Array Windows to Minimize Ion Bombardment Effects during Plasma Processing of Dielectrics K.W. Hsu, F.A. Choudhury, H. Ren, University of Wisconsin-Madison, B.N. Moon, Kyungsung University, Korea, A.G. Olson, University of Wisconsin-Madison, Y.M. Sung, Kyungsung University, Korea, Y. Nishi, Stanford University, J.L. Shohet, University of Wisconsin-Madison |
| PS-ThP36 Deposition of YSZ Thin Films by Laser-Assisted Plasma Coating at Atmospheric Pressure (LAPCAP) Z. Ouyang, Y.L. Wu, P. Raman, L. Meng, T.S. Cho, D.N. Ruzic, University of Illinois at Urbana Champaign |
| PS-ThP38 Plasma Propagation Speed and Electron Temperature in Atmospheric Pressure Non-thermal Bioplasma Jet P. Suanpoot, Maejo University Phrae Campus, Thailand, Y.G. Han, W.Y. Lee, G.S. Cho, E.H. Choi, Kwangwoon University, Republic of Korea |
| PS-ThP39 Increase Film Quality and Campaign Length in Reactive Sputtering Applications With Pulsed-DC Power D. Pelleymounter, Advanced Energy Industries Inc. |
| PS-ThP40 Control of Radical/Ion Ratios in Electron Beam-Generated Plasmas and their Effect on Polymer Surface Modification S.G. Walton, E.H. Lock, R. Fernsler, Naval Research Laboratory |
| PS-ThP43 Atomic Layer Etching of Ultra-thin High-k Dielectric Film for Gate Oxide in MOSFET Devices C.K. Kim, Sungkyunkwan University, Republic of Korea, J.K. Kim, Samsung Electronics Co. Ltd., Republic of Korea, G.Y. Yeom, Sungkyunkwan University, Republic of Korea |
| PS-ThP44 Study on the Plasma Damage on the Interface between the Titanium Nitride and Hafnium Oxide during Etching Carbon Mask on the Titanium Nitride K.H. Bai, Y. Jeon, M.C. Kim, S. Choi, Samsung Electronics Co. Ltd., Republic of Korea |
| PS-ThP45 Experimental and Simulation Studies of Capacitively Coupled Silan-Hydrogen Plasmas for Deposition of m-C Si Film C.-H. Fan, S.-E. Lien, K.-C. Leou, National Tsing Hua University, Taiwan, Republic of China, C.-H. Hsieh, M.-C. Wang, C.-F. Ai, Institute of Nuclear Energy Research, Taiwan, Republic of China |
| PS-ThP46 Diagnostic Study of Plasmas in Solution Driven by Pulsed Power - Study of History Effect and Observation of S2 Emission C.Y. Sie, C.C. Hsu, National Taiwan University, Taiwan, Republic of China |