| AVS 59th Annual International Symposium and Exhibition | |
| Plasma Science and Technology | Thursday Sessions |
| Session PS-ThP |
| Session: | Plasma Science and Technology Poster Session |
| Presenter: | S.H. Kim, University of Wisconsin-Madison |
| Authors: | S.H. Kim, University of Wisconsin-Madison D. Akbar, University of Wisconsin-Madison J.L. Shohet, University of Wisconsin-Madison B.N. Moon, Kyungsung University, Korea W.J. Choi, Kyungsung University, Korea Y.M. Sung, Kyungsung University, Korea |
| Correspondent: | Click to Email |
In processing plasma sources for semiconductor device fabrication, both uniformity over a large area and controllability to obtain desirable plasma parameters are required. A magnetic neutral loop discharge (NLD) plasma1) has been proposed as a new plasma source which satisfies these requirements. The position and the diameter of the plasma can be easily controlled by changing the position and the diameter of a neutral loop (NL). It has been theoretically shown that the electron motion becomes nonlinear around the NL when the radio frequency (RF) electric field is applied along the NL perpendicular to the magnetic field lines2). The electron makes meandering motions and acquires kinetic energy of several tens of electron-volts from the RF electric field where the meandering range contains the region between the NL and the electron cyclotron resonance (ECR) region, the length of which is designated by L3,4). Through such a process, the electrons are heated efficiently without collisions. The electron behavior near the NL determines the uniqueness of this plasma production technique and therefore details of its motion are needed. In this work, in order to accurately understand the characteristics of an NLD plasma, a numerical analysis of electron behavior around the NL was performed based on a 2-dimensional model in which three-dimensional effects were taken into account. For obtaining the optimum conditions for plasma production, the relationship between the normalized electric field and the average electron energy were also investigated.
This Work was supported by Kyungsung University Research Program (2011) and by the Semiconductor Research Corporation under Contact No. 2008-KJ-1871 and the National Science Foundation under Grant CBET-1066231.
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[2] Z. Yoshida et al., Phys. Rev. Lett. 81 (1998) 2458.
[3] Y. M. Sung et al., J. Vac. Sci. Technol. A18 (2000) 2149.
[4] Y. M. Sung et al., J. Vac. Sci. Technol. B20 (2002) 1457.