AVS 59th Annual International Symposium and Exhibition
    Plasma Science and Technology Thursday Sessions
       Session PS-ThP

Paper PS-ThP27
The SiOx Thin Film Deposition by using a Double Discharge System with a HMDS/Ar/He/O2 Gas Composition

Thursday, November 1, 2012, 6:00 pm, Room Central Hall

Session: Plasma Science and Technology Poster Session
Presenter: G.Y. Kim, Sungkyunkwan University, Republic of Korea
Authors: G.Y. Kim, Sungkyunkwan University, Republic of Korea
J.B. Park, Sungkyunkwan University, Republic of Korea
G.Y. Yeom, Sungkyunkwan University, Republic of Korea
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Silicon oxide thin films have been extensively investigated due to the outstanding chracteristics such as hardness, specific chemical structure, and high scratch resistance. In most of cases, SiOx thin films are deposited by the plasma enhanced chemical vapor deposition processes because the high quality materials can be obtained. However, the PECVD has some drawbacks that are related to vacuum system. Therefore, plasma deposition at atmospheric pressure has received attention as promising technology. Among the many kinds of AP-plasma sources, Dielectric Barrier Discharge(DBD) source which consists of two parallel electrodes can get the uniform and large-area glow discharge. Especially, double discharge system which composed of direct-type DBD and remote-type DBD was improved the various mechanical characteristics of SiOx thin film and increased the process efficiency.In this paper, SiOx thin films with a low content of impurities were deposited by using a double discharge system with a gas mixture of hexamethyldisilazane (HMDS)/ O2/ He/ Ar. The use of the double discharge system increased not only the SiOx thin film deposition rates, but also preocess efficiency. When AC voltage was applied to the remote-type DBD from 4 to 7 kV, the deposition rate of SiOx was increased from 7 to 36.1 nm/scan. Also as using double discharge system (5 kV, 20 kHz AC voltage was applied to the direct-type DBD), the deposition rate of the SiOx thin films was futher increased from 20 to 58.3 nm/scan with the increase of the AC biasing to the remote-type DBD from 4 to 7 kV. The improvment in the properties of SiOx films was partially related to the increased gas dissociation by the additional AC biasing of substrate.