| AVS 52nd International Symposium | |
| Electronic Materials and Processing | Tuesday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| EM-TuP1 Nano-scale Characterization of High-k Dielectric Materials by Conducting Atomic Force Microscopy S. Kremmer, H. Wurmbauer, C. Teichert, University of Leoben, Austria, G. Tallarida, S. Spiga, C. Wiemer, M. Fanciulli, Laboratorio MDM - INFM, Italy |
| EM-TuP2 Production of a Hafnium Silicate Dielectric Layer For Use As a Gate Oxide by Solid-State Reaction H.T. Johnson-Steigelman, S.S. Parihar, A.V. Brinck, P.F. Lyman, University of Wisconsin-Milwaukee |
| EM-TuP3 Investigation of Annealing Effect and Suppression of Hydration and Silicate Formation of La@sub 2@O@sub 3@ Thin Films D. Eom, S.Y. No, C.S. Hwang, H.J. Kim, Seoul National University, Korea |
| EM-TuP4 Nucleation Behavior of Ru Thin Films Prepared by MOCVD on TiN Substrate with TiCl@sub 4@ Pre-Treatment B.S. Kim, H.S. Seo, C.S. Hwang, Seoul National University, Korea, S.Y. Kang, J.Y. Kim, K.H. Lee, H.J. Lim, C.Y. Yoo, S.T. Kim, Samsung Electronics Co., Ltd., Korea, H.J. Kim, Seoul National University, Korea |
| EM-TuP5 Structural and Electrical Properties of PZT Thin Films Patterned by Chemical Mechanical Polishing Process for FRAM Applications N.-H. Kim, P.-J. Ko, G.-W. Choi, Chosun University, Korea, Y.-J. Seo, Daebul University, Korea, W.-S. Lee, Chosun University, Korea |
| EM-TuP6 Chemical Mechanical Polishing Characteristics of BTO Thin Films by BaTiO@sub 3@ Abrasive Slurry for High-Density DRAM Application P.-J. Ko, N.-H. Kim, J. Park, Chosun University, Korea, Y.-J. Seo, Daebul University, Korea, W.-S. Lee, Chosun University, Korea |
| EM-TuP7 Poly(3-hexylthiophene) Organic Thin Film Transistor on Polyimide using Electroplated Au Electrodes J.G. Lee, Y.G. Seol, N.-E. Lee, Sungkyunkwan University, South Korea |
| EM-TuP8 Scanning Tunneling Microscopy Study of Rubrene on Au(100) Substrate Y.S. Cho, Y.J. Song, H.J. Yang, S.H. Kim, Y. Kuk, CSNS, Seoul National University, Korea |
| EM-TuP9 Organic Light Emitting Diodes Using Alkaline-earth Metals as an Electron-injecting Layer and Their Semi-passivation C.H. Jeong, J.T. Lim, J.H. Lee, J.H. Lim, G.Y. Yeom, Sungkyunkwan University, Korea |
| EM-TuP10 Highly-efficient Top-emission Organic Light-emitting Diodes Using Alkali Metal as an Electron-injecting Layer and Their Semi-passivation J.T. Lim, C.H. Jeong, J.H. Lee, J.H. Lim, G.Y. Yeom, Sungkyunkwan University, Korea |
| EM-TuP11 Oxygen Doping of DNA Molecules Using Rapid Thermal Processor at Low Temperature M.W. Yoon, J.M. Lee, K.-S. Kim, Y.-H. Roh, Sungkyunkwan University, Korea |
| EM-TuP12 Field Effect Properties of M-DNA Molecules Observed by Changing Gate Voltages J.M. Lee, Y.-H. Roh, Sungkyunkwan University, Korea |
| EM-TuP13 Simple Patterning Techniques for Fabrication of Organic Thin Film Transistors S.J. Jo, W.J. Kim, C.S. Kim, H.K. Baik, Yonsei University, Korea |
| EM-TuP14 Encapsulation of Pentacene Thin-Film Transistors with a Transparent Oxide/Organic Smoothing Layer W.J. Kim, W.H. Koo, S.J. Jo, C.S. Kim, H.K. Baik, Yonsei University, Korea |
| EM-TuP15 Photo- and Electro-Luminescence Studies of Highly Alkyl-Substituted Templated Bis(8-Hydroxyquinoline) Derivatives for Organic Light Emitting Diodes R.D. Torres, P.H. Holloway, J.R. Reynolds, University of Florida, M. Albrecht, RWTH Aachen, Germany |
| EM-TuP16 A Study of the Optical and Electronic Properties of Poly(Vinylidene Fluoride-Trifluoroethylene) Copolymer Thin Films Y.X. Li, Shandong University, China, L. Yan, E.A. Irene, University of North Carolina-Chapel Hill |
| EM-TuP17 Optical and Interfacial Electronic Properties of Spin Cast Poly(o-methoxyaniline) (POMA)Thin Films R.P. Shrestha, D.X. Yang, E.A. Irene, University of North Carolina-Chapel Hill |
| EM-TuP20 Contact Properties in Metal/Molecule/GaAs Devices P.D. Carpenter, S. Lodha, Q. Hang, D.B. Janes, Purdue University |
| EM-TuP22 Effect of Fluorine-Neutral Beam Irradiation on the Ohmic Contact Formation to n-type GaN H.C. Lee, J.W. Bae, B.J. Park, G.Y. Yeom, Sungkyunkwan University, Korea |
| EM-TuP23 Effect of Nitrogen Contents ( 0%-5.3%) on the Temperature Dependence of Photoluminescence in InGaAsN/GaAs Single Quantum Wells F.-I. Lai, National Chiao-Tung Univ., Taiwan, S.-Y. Kuo, National Applied Research Labs, Taiwan, J.S. Wang, Opto-Electronics & Systems Labs of the Industrial Technology Research Institute, Taiwan, H.C. Kuo, National Chiao-Tung Univ., Taiwan, J.Y. Chi, Opto-Electronics & Systems Labs of the Industrial Technology Research Institute, Taiwain, S.C. Wang, National Chiao-Tung Univ., Taiwan, H.S. Wang, C.T. Liang, Y.F. Chen, National Taiwan Univ. |
| EM-TuP25 Preparation of Indium Nitride Thin Films by RF-MOMBE S.-Y. Kuo, C.-C. Kei, National Applied Research Laboratories, Taiwan, C.K. Chao, National Central University, Taiwan, C.Y. Su, C.N. Hsiao, National Applied Research Laboratories, Taiwan |
| EM-TuP26 Electron Spin Resonance Investigation of the Crystallization of Silicon Carbide Thin Films M. Tabbal, E. Hannoun, T. Christidis, S. Isber, American University of Beirut, Lebanon |
| EM-TuP27 Remote Plasma-Enhanced Chemical Vapor Deposition of Tantalum Diffusion Barrier E.R. Fisher, P.R. McCurdy, Colorado State University |
| EM-TuP29 The Characteristics of ZnO:Al Film Using Reactive Magnetron Sputtering System for Touch Screen Applications H.S. Jeong, M.G. Kim, Y.W. Seo, ITM Inc., Korea, S.J. Kwon, Kyungwon University, Korea |
| EM-TuP30 Large Nonlinear Optical Properties of Lead Magnesium Niobate-Lead Titanate Thin Films Grown by Pulsed Laser Deposition D.-R. Liu, P.-T. Cheng, National Applied Research Laboratories,Taiwan, S.-L. Ou, National Taiwan Normal University, Taiwan, J.-S. Chen, National Applied Research Laboratories, Taiwan, C.-P. Cheng, National Taiwan Normal University, Taiwan |
| EM-TuP32 Electromigration Performance by Via Structure in Cu Dual-damascene Process H.-K. Lee, M.-H. Choi, Chung-Ang Univ., Korea, N.-H. Kim, Chosun Univ., Korea, S.-Y. Kim, DongbuAnam Semiconductor Inc., E.-G. Chang, Chung-Ang Univ., Korea |
| EM-TuP35 The Growth and Characterization of InN Films Grown by High-Pressure CVD V.T. Woods, M. Alevli, J. Senawiratne, M. Strassburg, N. Dietz, Georgia State University |
| EM-TuP36 Characteristics of Lanthanum Oxide Prepared using La(iPrCp)@sub 3@ and H@sub 3@O S.Y. No, D. Eom, C.S. Hwang, H.J. Kim, Seoul National University, Korea |
| EM-TuP37 Zr-doped HfO2 High-k Dielectric with an Inserted HfNx Interface Layer J. Yan, J. Lu, S. Chatterjee, H.C. Kim, Y. Kuo, Texas A&M University |