AVS 52nd International Symposium
    Electronic Materials and Processing Tuesday Sessions
       Session EM-TuP

Paper EM-TuP25
Preparation of Indium Nitride Thin Films by RF-MOMBE

Tuesday, November 1, 2005, 4:00 pm, Room Exhibit Hall C&D

Session: Electronic Materials and Processing Poster Session
Presenter: S.-Y. Kuo, National Applied Research Laboratories, Taiwan
Authors: S.-Y. Kuo, National Applied Research Laboratories, Taiwan
C.-C. Kei, National Applied Research Laboratories, Taiwan
C.K. Chao, National Central University, Taiwan
C.Y. Su, National Applied Research Laboratories, Taiwan
C.N. Hsiao, National Applied Research Laboratories, Taiwan
Correspondent: Click to Email
Indium nitride (InN) films have been prepared directly on the c-plane sapphire substrate by a self-designed radio-frequency plasma metal organic molecular beam epitaxy (RF-MOMBE) system. We have investigated the influence of growth temperature on the surface morphology and crystal structures by x-ray diffraction (XRD), atomic force microscopy (AFM), scanning electron microscopy (SEM) and energy dispersive spectroscopy (EDS). At growth temperatures higher than 500 @super o@C, the hexagonal wurtzite InN films exhibit randomly oriented crystalline nature. Furthermore, a pronounced two-dimensional growth mode was observed at the growth temperature of 500 @super o@C, and this film shows highly orientation along the c-plane. These results indicate that the control of growth temperature is essential for engineering the growth of InN on Al@sub 2@O@sub 3@ (0001), and it might be also applicable for other lattice-mismatched III-V heteroepitaxial systems.