AVS 52nd International Symposium
    Electronic Materials and Processing Tuesday Sessions
       Session EM-TuP

Paper EM-TuP37
Zr-doped HfO2 High-k Dielectric with an Inserted HfNx Interface Layer

Tuesday, November 1, 2005, 4:00 pm, Room Exhibit Hall C&D

Session: Electronic Materials and Processing Poster Session
Presenter: J. Yan, Texas A&M University
Authors: J. Yan, Texas A&M University
J. Lu, Texas A&M University
S. Chatterjee, Texas A&M University
H.C. Kim, Texas A&M University
Y. Kuo, Texas A&M University
Correspondent: Click to Email
Hafnium oxide (HfO2) is a popular high-k gate dielectric candidate. However, HfO2 is easily crystallized at a low temperature, such as < 600C. The effective dielectric constant of HfO2 is lowered due to the formation of a SiOx interface layer. Previously, there are reports that the k value of a high-k film can be increased by inserting a high-k interface layer between the high-k film and silicon substrate.@footnote 1@ In addition, the crystallization temperature of a high-k film can be increased by adding a certain amount of dopant.@footnote 2@ In this paper, authors will report new results on Zr-doped HfO2 films with or without an inserted HfNx interface layer. The leakage current is improved with the doping process as well as the addition of a HfNx interface layer. Other dielectric properties, such as the effective k value, interface density of states, trapped charges, and frequency dispersion, and the final interface layer material properties, such as the bond structure and thickness, of the new high-k gate stack will also be presented and discussed. @FootnoteText@ @footnote 1@ J. Lu, J. -Y. Tewg, and Y. Kuo, Engineering the nm-thick Interface Layer Formed Between a High-k Film and Silicon, MRS Symp. Procs. Integration of Advanced Nanoelectronic Devices - Critical Issues and Solutions, 811, 81-86 (2004).@footnote 2@ J.-Y. Tewg,Y. Kuo, and J. Lu, Suppression of Crystallization of Tantalum Oxide Thin Film by Doping with Zirconium, Electrochemical and Solid-State Letters, 8(1), G27-G29 (2005).