AVS 52nd International Symposium
    Electronic Materials and Processing Tuesday Sessions
       Session EM-TuP

Paper EM-TuP14
Encapsulation of Pentacene Thin-Film Transistors with a Transparent Oxide/Organic Smoothing Layer

Tuesday, November 1, 2005, 4:00 pm, Room Exhibit Hall C&D

Session: Electronic Materials and Processing Poster Session
Presenter: W.J. Kim, Yonsei University, Korea
Authors: W.J. Kim, Yonsei University, Korea
W.H. Koo, Yonsei University, Korea
S.J. Jo, Yonsei University, Korea
C.S. Kim, Yonsei University, Korea
H.K. Baik, Yonsei University, Korea
Correspondent: Click to Email
The long-term stability of the pentacene thin-film transistors encapsulated with a transparent oxide which was prepared by ion-beam assisted deposition (IBAD) was investigated in terms of the electrical properties associated with material characterizations. A polymer layer had been deposited in vacuum prior to IBAD process not only for a buffer layer, but also for a smoothing layer. Our unique multi-layer encapsulation was found to effectively suppress water and oxygen permeation into the organic active layer so that our pentacene TFT with the encapsulation showed a greatly enhanced long-term stability. It is thus concluded that our encapsulation can be employed for stable operation of organic devices such as organic thin-film transistors (OTFTs) and organic light-emitting diodes (OLEDs) in air ambient.