AVS 52nd International Symposium
    Electronic Materials and Processing Tuesday Sessions
       Session EM-TuP

Paper EM-TuP23
Effect of Nitrogen Contents ( 0%-5.3%) on the Temperature Dependence of Photoluminescence in InGaAsN/GaAs Single Quantum Wells

Tuesday, November 1, 2005, 4:00 pm, Room Exhibit Hall C&D

Session: Electronic Materials and Processing Poster Session
Presenter: F.-I. Lai, National Chiao-Tung Univ., Taiwan
Authors: F.-I. Lai, National Chiao-Tung Univ., Taiwan
S.-Y. Kuo, National Applied Research Labs, Taiwan
J.S. Wang, Opto-Electronics & Systems Labs of the Industrial Technology Research Institute, Taiwan
H.C. Kuo, National Chiao-Tung Univ., Taiwan
J.Y. Chi, Opto-Electronics & Systems Labs of the Industrial Technology Research Institute, Taiwain
S.C. Wang, National Chiao-Tung Univ., Taiwan
H.S. Wang, National Taiwan Univ.
C.T. Liang, National Taiwan Univ.
Y.F. Chen, National Taiwan Univ.
Correspondent: Click to Email
A series of InGaAsN/GaAs single-quantum wells (SQWs) with N contents varied from 0 % to 5.3 % were grown by molecular-beam epitaxy using a solid As and nitro-gen plasma sources. The impact of nitrogen concentration on the optical properties, as determined by the temperature dependence of photoluminescence (PL), of a 6 nm SQW was investigated. In the low-temperature region, a pronounced temperature-dependent S-shaped peak positions was observed in PL spectra while increasing nitrogen concen-tration. Two approaches are used to estimate the localization energy and a strong cor-relation was observed. Quenching behavior reveals that the defect-related nonradiative processes might enhance in the highly nitrogen incorporated samples and thus influence the recombination dynamics. In addition, the evolution of the peak positions of In-GaAsN/GaAs samples was in agreement with the empirical Varshni model in the high-temperature region. A significant reduction in the temperature dependence of the emission peak position compared to the nitrogen-free InGaAs SQW is analyzed as well, and further confirms the prediction of proposed band anticrossing model of the elec-tronic structure of III-N-V alloys.