AVS 52nd International Symposium
    Electronic Materials and Processing Tuesday Sessions
       Session EM-TuP

Paper EM-TuP16
A Study of the Optical and Electronic Properties of Poly(Vinylidene Fluoride-Trifluoroethylene) Copolymer Thin Films

Tuesday, November 1, 2005, 4:00 pm, Room Exhibit Hall C&D

Session: Electronic Materials and Processing Poster Session
Presenter: Y.X. Li, Shandong University, China
Authors: Y.X. Li, Shandong University, China
L. Yan, University of North Carolina-Chapel Hill
E.A. Irene, University of North Carolina-Chapel Hill
Correspondent: Click to Email
Thin films of poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)] have been deposited by spin casting onto bare Si and SiO@sub 2@ coated on Si substrates. From trials with a variety of solvents methyl ethyl ketone (MEK) yielded the most uniform smooth films as determined using atomic force microscopy. The films were found to be optically transparent in the 280-830 nm (1.5-4.5eV) optical range. Spectroscopic ellipsometry (SE) was used to obtain the refractive index in the 1.5-4.5eV photon energy range that was found to decrease with thinner films. SE performed at several sensitive angles of incidence has revealed no measurable optical anisotropy. Annealing in vacuum caused about a 3% decrease in thickness and an increase of about 0.02 in the refractive index. Capacitance versus voltage (C-V) and conductance (G(@omega@)) versus gate voltage (G(@omega@)-V) measurements were performed on capacitor structures in order to determine K, interface charge and the density of interface states (D@sub it@), respectively. Thus far a value of about 9 was obtained for the static dielectric constant for 50nm films and interface charge and D@sub it@ results appear promising for the use of P(VDF-TrFE) as a gate dielectric and thin film piezoelectric for various electronic applications. @FootnoteText@ This research is supported by NASA URETI and the NSF.