AVS 52nd International Symposium
    Electronic Materials and Processing Tuesday Sessions
       Session EM-TuP

Paper EM-TuP35
The Growth and Characterization of InN Films Grown by High-Pressure CVD

Tuesday, November 1, 2005, 4:00 pm, Room Exhibit Hall C&D

Session: Electronic Materials and Processing Poster Session
Presenter: V.T. Woods, Georgia State University
Authors: V.T. Woods, Georgia State University
M. Alevli, Georgia State University
J. Senawiratne, Georgia State University
M. Strassburg, Georgia State University
N. Dietz, Georgia State University
Correspondent: Click to Email
Group III-nitride material systems (e.g. AlN-GaN-InN) have generated considerable interest for use as the basis for advanced opto-electronic device structures. Fabrication of multi-tandem solar cells, high speed optoelectronics and solid state lasers operating in the higher energy wavelengths will be made possible using (Ga@sub1-y-x@Al@suby@In@subx@)N heterostructures due to their robustness against radiation and the wide spectral application range. As organometallic chemical vapor deposition (OMCVD) has proved to be the most efficient technique for commercial production of group III-V semiconductors, it would be expedient to gain insight in applying OMCVD to group III-nitride material systems. However, the growth of indium rich (In1-xGax)N thin films utilizing OMCVD has been unsuccessful, primarily due to the large thermal decomposition pressures in indium rich group III-nitride alloys at the optimum growth temperature. As shown in this contribution, high-pressure chemical vapor deposition (HPCVD) overcomes the limitations, enabling the growth of InN and indium rich group III-nitride alloys. This high pressure approach allows InN growth at temperatures of 1100K and above which is a major step forward towards the production of indium rich heterostructures, providing a closer match to the ideal processing temperatures of (Ga@sub1-x@In@subx@)N. Real-time optical characterization techniques are applied to study and control the gas phase kinetics and surface chemistry processes during he growth process. The ex-situ analysis of the InN layers indicates that the shift of the absorption edge from 1.85 eV down below 0.6 eV is caused by a series of absorption centers, that appear as the indium to nitrogen stoichiometry varies. This contribution will provide results from the real-time optical characterization of InN and will correlation the process parameter to results obtained by XRD, Raman spectroscopy and optical spectroscopy, in order to asses the film quality.