AVS 47th International Symposium | |
Plasma Science and Technology | Wednesday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
PS-WeP1 Plasma Damage in Etching of SrBi@sub 2@Ta@sub 2@O@sub 9@ Thin Films Using Inductively Coupled Cl@sub 2@/Ar and Cl@sub 2@/N@sub 2@ Plasma D.P. Kim, Chungang University, Korea, W.J. Lee, B.G. Yu, ETRI, Korea, T.-H. Kim, YIT, Korea, C.-I. Kim, Chungang University, Korea |
PS-WeP2 Design and Characterization of a Magnetic Pole Enhanced Inductively Coupled Plasma Source T. Meziani, P.P. Colpo, F. Rossi, Joint Research Center, Italy |
PS-WeP3 Analysis of Chlorine-Containing Plasmas with Langmuir Probes, Self-Excited Electron Resonance Spectroscopy, and Optical Emission Spectroscopy G. Franz, INFINEON Technologies, Germany, P. Messerer, Technical University, Germany |
PS-WeP4 Infrared Characterization of a Cascade Arc Plasma R. Raghavan, P. Morrison, Case Western Reserve University |
PS-WeP5 Spatially Resolved Atomic Oxygen Concentration Measurements Using a Quartz Crystal Microbalance in a 300 mm Plasma Ash Chamber A.K. Srivastava, P. Sakthivel, Eaton SEO |
PS-WeP6 Plasma-Surface Diagnostics in LAPPS@footnote 1@ S.G. Walton, NRC Postdoctoral Research Associate, D. Leonhardt, D.D. Blackwell, D.P. Murphy, R.F. Fernsler, R.A. Meger, Naval Research Laboratory |
PS-WeP7 Measurements of Plasma-wave Interactions in a Commercial-scale Helicon-driven Plasma Processing Reactor J.E. Norman, D.N. Ruzic, N. Li, M.E. Boaz, J.P. Allain, University of Illinois, Urbana-Champaign |
PS-WeP8 Spatial Profiles of Neutral, Ion and Etch Uniformity in a Large-Area High Density Plasma Reactor S. Yun, G.R. Tynan, University of California, San Diego |
PS-WeP9 Probe Diagnostic Development for Electron-Beam Produced Plasmas D.D. Blackwell, S.G. Walton, D. Leonhardt, D.P. Murphy, R.F. Fernsler, W.E. Amatucci, R.A. Meger, Naval Research Laboratory |
PS-WeP10 Langmuir Probe Measurements in an Inductively Coupled Ar/CF@sub 4@ Plasmas M.V.V.S. Rao, M. Meyyappan, S.P. Sharma, NASA-Ames Research Center |
PS-WeP11 Target Surface Modifications during Reactive Sputtering of Aluminium in an Argon-oxygen Plasma D.J.M.G. Depla, R. De Gryse, University Ghent, Belgium |
PS-WeP12 An Investigation of Plasma-polymer Interactions by Mass Spectrometry J. Hong, M.R. Wertheimer, L. Martinu, Ecole Polytechnique Montreal, Canada |
PS-WeP13 Comparing Polyatomic Ions and Plasmas for Organosiloxane Film Growth from HMDSO E.R. Fuoco, L. Hanley, University of Illinois at Chicago, A.J. Beck, P.N. Brookes, R.D. Short, The University of Sheffield, UK |
PS-WeP14 Reactive Sputtering of Al@sub2@O@sub3@ in a Cylindrical Hollow Cathode Magnetron A. Pradhan, D. Guerin, S.I. Shah, University of Delaware |
PS-WeP15 High Rate and Low Damage Resist Ashing Employing Surfacewave Oxygen Plasma with High Permittivity Material Window H. Shindo, K. Kusaba, Tokai University, Japan, K. Shinagawa, M. Furukawa, K. Kawamura, Canon Sales Corporation |
PS-WeP16 Etch Issues for Trench First and Via First Dual Damascene D. Keil, E. Wagganer, B.H. Helmer, Lam Research Corporation |
PS-WeP17 Thermal Effects in Atomic-Order Nitridation of Si by a Nitrogen Plasma T. Seino, D. Muto, T. Matsuura, J. Murota, Tohoku University, Japan |
PS-WeP18 Ion Assisted Deposition of Silicon Nitride Films using Electron Cyclotron Resonance Plasma K. Denamma Vargheese, G. Mohan Rao, Indian Institute of Science, India |
PS-WeP19 Structural Studies of Hyper-thin SiO@sub 2@ coatings on Polymers G. Dennler, Ecole Polytechnique de Montreal, Canada, A. Houdayer, University of Montreal, Canada, Y. Ségui, Université Paul Sabatier, France, M.R. Wertheimer, Ecole Polytechnique of Montreal, Canada |
PS-WeP20 Numerical Study of HBr/O@sub 2@/CF@sub 4@ and HBr/O@sub 2@/CHF@sub 3@ Etching Chemistry in an Inductively Coupled Plasma Reactor X. Xu, P. Schoenborn, LSI Logic Corporation |
PS-WeP21 Low-temperature Deposition of Thin Oxides for Si-LSIs Using Electron Cyclotron Resonance Sputtering T. Ono, K. Saito, Y. Taketa, NTT Telecommunications Energy Laboratories, Japan, S. Matsuo, NTT AFTY Corporation, Japan |
PS-WeP22 Silicon Etch Chamber and Process Development Using Diode Laser Measurements of HBr Concentration and Temperature W. Collison, T. Ni, Lam Research Corp., S. Chou, J. Jeffries, Stanford University |
PS-WeP23 Plasma Etching of Lead Germanate (PGO) Ferroelectric Thin Film H. Ying, J.S. Maa, T.K. Li, F. Zhang, S.T. Hsu, Sharp Laboratories of America, Inc. |
PS-WeP24 Morphological Study of a New Copper Dry Etching Process Y. Kuo, S. Lee, Texas A&M University |
PS-WeP25 Titanium-Nitride Etch Techniques Using High Density Plasmas for Advanced BiCMOS/CMOS Applications D. Galley, ATMEL Corp., Fab 5, K. Sannes, Applied Materials Corp., COS, A. Kelkar, G. Frazier, M.J. Evans, M. Whiteman, ATMEL Corp., Fab 5 |
PS-WeP26 Simulation of the Production of Atomic Hydrogen in a Low-pressure-arc-discharge-based Source D.I. Proskurovsky, Institute of High Current Electronics, Russia, V.A. Kagadei, Research Institute of Semiconductor Devices, Russia, A.V. Kozyrev, Institute of High Current Electronics, Russia, I.V. Osipov, Tomsk University of Control Systems and Radioelectronics, Russia |
PS-WeP27 Two-Dimensional Simulation of Pulsed Power Electronegative Plasmas D.J. Economou, B. Ramamurthi, V. Midha, University of Houston |
PS-WeP28 Kinetic Modeling of High-Density Diamond Deposition Plasma Chemistry R. Blumenthal, Auburn University |
PS-WeP29 Evaluation of the Spatial Density of Sputtered Particles with Monte Carlo Simulation T. Nakano, S. Baba, Seikei University, Japan |
PS-WeP30 An Analytical Solution to a Langmuir- Hinshelwood Surface Model of Si Dry Etching K.R. Milkove, IBM T.J. Watson Research Center |
PS-WeP31 Plasma Measurements and Simulations of a New Hollow Cathode Magnetron Plasma Source for Ionized PVD of Cu Seed Layers D.B. Hayden, M. Ow, K.A. Ashtiani, K.F. Lai, K. Levy, Novellus Systems, Inc. |
PS-WeP32 New Reactor for High-rate Deposition of Functional Coatings on Polymer Substrates P. Bulkin, A. Hofrichter, B. Drevillon, LPICM, Ecole Polytechnique, France |