AVS 47th International Symposium
    Plasma Science and Technology Wednesday Sessions
       Session PS-WeP

Paper PS-WeP21
Low-temperature Deposition of Thin Oxides for Si-LSIs Using Electron Cyclotron Resonance Sputtering

Wednesday, October 4, 2000, 11:00 am, Room Exhibit Hall C & D

Session: Poster Session
Presenter: T. Ono, NTT Telecommunications Energy Laboratories, Japan
Authors: T. Ono, NTT Telecommunications Energy Laboratories, Japan
K. Saito, NTT Telecommunications Energy Laboratories, Japan
Y. Taketa, NTT Telecommunications Energy Laboratories, Japan
S. Matsuo, NTT AFTY Corporation, Japan
Correspondent: Click to Email
Electron Cyclotron Resonance (ECR) Sputtering has been investigated for application to Si-LSI processes of 8-inch wafers. The system consisted of the ECR sputtering process unit (with the ECR source coupled with divided microwaves),@footnote 1@ that was connected to an 8-inch wafer transfer system. For the deposition of aluminum oxides, the cylindrical sputtering target (Al: 99.99 %) was set around the plasma stream generated by ECR (gas: Ar/O@sub 2@). The sputtering was accomplished by biasing at 13.56 MHz rf utilizing ions in the plasma stream. The deposition was carried out without external heating; the wafer temperature during deposition was about 100 °C due to plasma heating. The film thickness ranged from 2 to 40nm. The uniformities of the deposited films were ±2.5 % (thickness), and ±0.3 % (optical refractive index of 1.61 at 632 nm) over a 200-mm-diameter. The resistivity and the brake-down strength of the 20-nm-thick films were about 5x10@super 14@ @OHM@cm, and 8 MV/cm, respectively. The dielectric constant was about 8. The fixed charge of the films depended on the oxygen partial pressure during deposition and can be controlled. ECR sputtering can be used for gate processes and capacitor processes at low temperature. @FootnoteText@ @footnote 1@ T. Ono et al., J. Vac. Sci. Technol. A12, 1281 (1994).