AVS 59th Annual International Symposium and Exhibition
    Plasma Science and Technology Monday Sessions

Session PS-MoM
Advanced FEOL/Gate Etching 1

Monday, October 29, 2012, 8:20 am, Room 25
Moderator: L. Diao, Mattson Technology


  Click here to Download program book for this session  
  in Adobe Acrobat format  

Click a paper to see the details. Presenters are shown in bold type.

8:20am PS-MoM1
Selective Etching of Spacer with Pulsing in Inductively Coupled Plasmas for FinFET Devices
B. Zhou, M. Titus, P. Friddle, M. Robson, G. Upadhyaya, G. Kamarthy, Lam Research Corp, S. Kanakasabapathy, E. Franke, IBM Corp
8:40am PS-MoM2
Evaluation of Novel Spacer Etch Processes using a New Gas
S. Engelmann, E.A. Joseph, N.C.M. Fuller, W.S. Graham, E.M. Sikorski, IBM T.J. Watson Research Center, M. Nakamura, G. Matsuura, Zeon Chemicals L.P., H. Matsumoto, A. Itou, T. Suzuki, Zeon Corporation
9:00am PS-MoM3 Invited Paper
Anisotropic and Selective Etching of Novel Multifunctional Materials
J.P. Chang, University of California, Los Angeles
9:40am PS-MoM5
High Selective Etching of SiN Based Material Over Si and SiO2 using Evanescent Microwave Plasma for FINFET Spacer Applications
A. Raley, A. Ranjan, H. Kintaka, B. Messer, T. Mori, K. Kumar, P. Biolsi, Tokyo Electron Technology Center, America, LLC, A. Inada, Renesas Electronics, R. Jung, S. Kanakasabapathy, International Business Machines – Research Group
10:00am PS-MoM6
Highly Selective and Controllable Si3N4 Etching to Si and SiO2 for sub-22-nm Gate Spacer using CF3 Neutral Beam with O2 and H2
D. Nakayama, A. Wada, T. Kubota, Tohoku University, Japan, M. Haass, R.L. Bruce, R.M. Martin, N.C.M. Fuller, IBM TJ Watson Research Center, S. Samukawa, Tohoku University, Japan
10:40am PS-MoM8
Highly Selective Etching of Titanium Nitride Over Tantalum Nitride in Inductively Coupled Plasma
W. Zhu, H. Shin, S. Sridhar, L. Liu, V.M. Donnelly, D.J. Economou, University of Houston, C. Lenox, T. Lii, Texas Instruments
11:20am PS-MoM10
Detailed Analysis of Si Substrate Damage Induced by HBr/O2- and H2-Plasma Etching and the Recovery Process Designs
Y. Nakakubo, A. Matsuda, Kyoto University, Japan, M. Fukasawa, Sony Corporation, Japan, Y. Takao, Kyoto University, Japan, T. Tatsumi, Sony Corporation, Japan, K. Eriguchi, K. Ono, Kyoto University, Japan
11:40am PS-MoM11
Time-modulated Plasma Etching for Next Generation Devices
S. Sriraman, Y. Wu, G. Kamarthy, C. Rusu, J. Holland, A. Paterson, V. Vahedi, Lam Research