| AVS 59th Annual International Symposium and Exhibition | |
| Plasma Science and Technology | Monday Sessions |
| Session PS-MoM |
| Session: | Advanced FEOL/Gate Etching 1 |
| Presenter: | S. Sriraman, Lam Research |
| Authors: | S. Sriraman, Lam Research Y. Wu, Lam Research G. Kamarthy, Lam Research C. Rusu, Lam Research J. Holland, Lam Research A. Paterson, Lam Research V. Vahedi, Lam Research |
| Correspondent: | Click to Email |
Plasma etching has facilitated the continuation of Moore's Law from >1μm to now less than 20 nm and is used to enable next-generation semiconductor device technology. While etching is used to compensate for incoming lithographic limitations as well as non-uniformities from up-stream processes, it also offers ways to counter fundamental limitations of pattern dependent etching and atomic-scale mixing. In this context, time-modulated plasma etching is the key to address challenges arising in critical etch applications for <20nm technology nodes.
This paper will aim to discuss some fundamental factors in consideration for time-modulated plasma etching in a Transformer Coupled Plasma (TCP™) chamber and its outcomes on representative process applications. Using a combination of experimental results, diagnostics, and modeling & simulation, the advantages of different types of time-modulated plasma and their ability to control basic plasma properties will be covered. The role and benefits of independently controlling ions and neutrals to overcome limitations in etching and their applicability to next generation device architectures will be discussed.