| AVS 49th International Symposium | |
| Plasma Science | Wednesday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| PS+TF-WeP1 Expanding Thermal Plasma Deposition of UV Filters and Abrasion Resistant Coatings C.D. Iacovangelo, M. Schaepkens, General Electric Global Research Center |
| PS+TF-WeP2 Tuning the Material and Electrical Characteristics of ZrO@sub 2@ Film Obtained by Plasma Enhanced Chemical Vapor Deposition B. Cho, J.P. Chang, University of California, Los Angeles |
| PS+TF-WeP3 RF Inductively Coupled Plasma Assisted Re-sputtering Techniques for Step Coverage Control in sub 0.13µm Structures P. Gopalraja, S. Rengarajan, J. Forster, X. Tang, R. Jauhari, U. Kelkar, A. Chan, M. Schweitzer, K. Miller, A. Bhatnagar, N. Maity, J. Van Gogh, S. Parikh, Z. Xu, Applied Materials Inc. |
| PS+TF-WeP4 Plasma Enhanced Chemical Vapor Deposition of SiO@sub 2@ Films from Tetramethylcyclotetrasiloxane and Dimethyldimethoxysilane J. Zhang, E.R. Fisher, Colorado State University |
| PS+TF-WeP5 Evaluation of PFC Emission Reduction for PE-CVD Chamber Cleaning with Measurement and Simulation E. Wani, K. Kosano, T. Sunada, S. Okura, Y. Mitsui, K. Sakai, T. Beppu, Research Institute of Innovative Technology for the Earth (RITE), Japan, A. Sekiya, National Institute of Advanced Industrial Science and Technology (AIST), Japan |
| PS+TF-WeP6 Eliminating the Hysteresis Effect for Reactive Sputtering Processes T. Nyberg, S. Berg, Uppsala University, Sweden, U. Helmersson, Linkoping University, Sweden |
| PS+TF-WeP7 In situ Measurement of C@sub 2@ Radical Density in Microwave-Enhanced Methane/Hydrogen Plasma Used for Nanocrystalline Diamond Film Growth M. Hiramatsu, K. Kato, K. Ito, Meijo University, Japan, C.H. Lau, J.S. Foord, University of Oxford, UK |
| PS+TF-WeP8 Effect of NO Radical Produced by Additives to PFC on Global Warming during PECVD Chamber Cleaning Using a Remote ICP Source J.H. Kim, C.H. Oh, Sungkyunkwan University, Korea, S.S. Yoon, Jusung Engineering Co., Ltd., Korea, N.-E. Lee, G.Y. Yeom, Sungkyunkwan University, Korea |
| PS+TF-WeP9 TaN Diffusion Barriers by Chemical-Enhanced Physical Vapor Deposition (CEPVD) N. Li, J.P. Allain, D.N. Ruzic, University of Illinois, Urbana-Champaign |
| PS+TF-WeP10 Two-dimensional Modeling of Charged Particles Transport in Capacitively Coupled Radio-frequency Discharges A. Salabas, Instituto Superior Técnico, Portugal, G. Gousset, Univ. Paris-Sud, France, L.L. Alves, Instituto Superior Técnico, Portugal |
| PS+TF-WeP11 Effect of N-based Additive Gases to C@sub 4@F@sub 8@/O@sub 2@ on Global Warming Gas Emission during Silicon Nitride PECVD Chamber Cleaning Process Using a Remote Plasma Source C.H. Oh, N.-E. Lee, J.H. Kim, G.Y. Yeom, Sungkyunkwan University, Korea, S.S. Yoon, Jusung Engineering Co., Ltd., Korea |
| PS+TF-WeP12 Low-temperature PECVD Thin Film Optical Waveguides G.T. Dalakos, E.M. Breitung, General Electric Global Research Center |
| PS+TF-WeP14 Feature Profile Evolution during Cl@sub 2@ and HBr Plasma Etching of Silicon M.O. Bloomfield, T.S. Cale, Y.H. Im, Rensselaer Polytechnic Institute |
| PS+TF-WeP15 Plasma Damage Reduction in PZT Thin Films Etched by Inductively Coupled Plasma K.T. Lim, D.P. Kim, K.T. Kim, C.I. Kim, Chung-Ang University, Korea |
| PS+TF-WeP16 Effects of Substrate Temperature on the Etching of Silver Films using Inductively Coupled Halogen-based Plasmas S.D Park, Y.J. Lee, Sungkyunkwan University, Korea, S.G. Kim, H.H. Choe, M.P. Hong, Samsung Electronics, Korea, G.Y. Yeom, Sungkyunkwan University, Korea |
| PS+TF-WeP18 A Study of Sapphire Etching Characteristics using Magnetized Inductively Coupled Plasmas C.H. Jeong, D.W. Kim, H.Y. Lee, G.Y. Yeom, Sungkyunkwan University, Korea |
| PS+TF-WeP19 Improvement of Etching Sub-micron Photonic Structure by Enhanced-inductively Coupled Plasma (E-ICP) S.B. Jo, B.H. O, Inha University, Rep. of Korea, Y. Fainman, University of California, San Diego, S.G. Park, S.G. Lee, E.H. Lee, Inha University, Rep. of Korea |
| PS+TF-WeP20 Inductive Coupled Cl@sub 2@/Ar Plasma: Experimental Investigations and Modeling A.M. Efremov, Ivanovo State University of Chemistry & Technology, Russia, D.P. Kim, C.I. Kim, Chung-Ang University, Korea |
| PS+TF-WeP22 Improvement of ITO Etch Rate and Uniformity by Enhanced-ICP Technique C.W. Kim, S.B. Jo, B.H. O, S.G. Park, Inha University, South Korea |
| PS+TF-WeP23 Modeling of Etch Profiles in RF biased Inductively Coupled Plasma Etching Reactor C.D. Wang, B. Markland, D. Malanaric, E. Brown, D. Galley, ATMEL, B. Abraham-Shrauner, Washington University, R. Hoekstra, Sandia National Laboratories |
| PS+TF-WeP24 Impact of Pattern Density on Characterization of Critical Dimension X. Xu, E. Croffie, M. Garza, LSI Logic Corporation |
| PS+TF-WeP25 Effects of Ion Bombordment on Developed Photoresist during RIE Processes for sub 0.25 micron Semiconductor Devices M. Naeem, R. Wise, IBM Microelectronics, T. Wang, Cypress Semiconductors, G. Worth, D. Dobuzinsky, IBM Microelectronics, Z. Lu, Infineon Tech, H. Abdul-Ridha, Conextent |
| PS+TF-WeP26 Characterization of RIE Lag Scaling In Oxides D.L. Keil, Lam Research Corporation |
| PS+TF-WeP27 The Etching Mechanism of Au Thin Films in Cl@sub 2@/Ar High Density Plasma Y.S. Chang, D.P. Kim, C.I. Kim, E.G. Chang, Chung-Ang University, Korea |
| PS+TF-WeP28 Reduction of Particle-contamination in Plasma Etching Equipment by Dehydration of Chamber Wall N. Ito, F. Uesugi, T. Moriya, NEC Corp., Japan, M. Matsumoto, Lam Research Co., Ltd., Japan, S. Liu, Lam Research Corporation, Y. Kitayama, Lam Research Co., Ltd., Japan |
| PS+TF-WeP29 Shallow Trench Isolation Etch for Sub 0.10 µm Applications S.M. Williams, J. He, M. Shen, Applied Materials |
| PS+TF-WeP30 Silcon Etching in High-Denisty Plasmas, Revisited A.S. Orland, R. Blumenthal, Auburn University |