AVS 49th International Symposium
    Plasma Science Wednesday Sessions
       Session PS+TF-WeP

Paper PS+TF-WeP4
Plasma Enhanced Chemical Vapor Deposition of SiO@sub 2@ Films from Tetramethylcyclotetrasiloxane and Dimethyldimethoxysilane

Wednesday, November 6, 2002, 11:00 am, Room Exhibit Hall B2

Session: Plasma Etching & Deposition
Presenter: J. Zhang, Colorado State University
Authors: J. Zhang, Colorado State University
E.R. Fisher, Colorado State University
Correspondent: Click to Email
The deposition of SiO@sub 2@ films from novel alkoxysilane/O@sub 2@ and alkoxysilane/N@sub 2@O plasmas has been investigated using tetramethylcyclotetrasiloxane (TMCTS) and dimethyldimethoxysilane (DMDMOS). The films were analyzed with Fourier transform infrared spectroscopy, x-ray photoelectron spectroscopy, and spectroscopic ellipsometry. For both the precursors, deposition rates and hydrocarbon incorporation in the SiO@sub 2@ films decrease with addition of O@sub 2@ or N@sub 2@O. High quality SiO@sub 2@ films can be deposited when the ratio of oxygen atom to precursor is equal or higher than the reaction stoichiometric ratios, i.e., 20:1 for TMCTS and 14:1 for DMDMOS. The effects of rf power and substrate position in the reactor on film quality are also examined. Gas phase species in these plasmas were studied with mass spectrometry and correlated with film characteristics. Moreover, with the imaging of radicals interacting with surfaces (IRIS) method, the surface reactivity of OH in these plasmas was measured as a function of O@sub 2@ or N@sub 2@O addition and rf power. The role of OH in deposition of SiO@sub 2@ films from TMCTS and DMDMOS based plasmas will be presented and compared to previous results for OH in TEOS/O@sub 2@ plasmas.@footnote 1@ @FootnoteText@ @footnote 1@K. H. A. Bogart, J. P. Cushing, and E. R. Fisher, J. Phys. Chem. B, 101. 10016 (1997).