AVS 49th International Symposium
    Plasma Science Wednesday Sessions
       Session PS+TF-WeP

Paper PS+TF-WeP30
Silcon Etching in High-Denisty Plasmas, Revisited

Wednesday, November 6, 2002, 11:00 am, Room Exhibit Hall B2

Session: Plasma Etching & Deposition
Presenter: A.S. Orland, Auburn University
Authors: A.S. Orland, Auburn University
R. Blumenthal, Auburn University
Correspondent: Click to Email
The ECR-microwave plasma etching of silicon with chlorine is revisited using the enhanced capabilities of supersonic pulse, plasma sampling mass spectrometry. Using a new orthogonal injection time-of-flight mass spectrometer, it is now possible to measure the relative concentrations of both etch products, such as SiCl, SiCl@sub 2@, SiCl@sub 3@, and sputtered species, such as Si@sub 2@Cl, Si@sub 2@Cl@sub 2@, and distinguish them from species formed in the gas phase as a function of plasma conditions.