AVS 49th International Symposium
    Plasma Science Wednesday Sessions
       Session PS+TF-WeP

Paper PS+TF-WeP25
Effects of Ion Bombordment on Developed Photoresist during RIE Processes for sub 0.25 micron Semiconductor Devices

Wednesday, November 6, 2002, 11:00 am, Room Exhibit Hall B2

Session: Plasma Etching & Deposition
Presenter: M. Naeem, IBM Microelectronics
Authors: M. Naeem, IBM Microelectronics
R. Wise, IBM Microelectronics
T. Wang, Cypress Semiconductors
G. Worth, IBM Microelectronics
D. Dobuzinsky, IBM Microelectronics
Z. Lu, Infineon Tech
H. Abdul-Ridha, Conextent
Correspondent: Click to Email
The use of advanced resist systems has become necessary for lithography in processing of advanced (sub 0.25 µm) semiconductor devices to achieve acceptable image quality. These novel resist systems are more sensitive to both post exposure treatments as well as the ion bombardment component present in reactive ion etch (RIE) processes. We discuss the impact of resist interactions with low energy plasma and morphological changes in the resist profile. In particular, the effects of different photoresist constituents, post develop bake conditions, various RIE steps and RIE parameters in capacitively coupled plasma (CCP), magnetically enhanced RIE (MERIE) and inductively coupled plasma (ICP) systems on resist morphology and the quality of final etched images are presented.