| AVS 54th International Symposium | |
| Plasma Science and Technology | Tuesday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 8:00am | PS2-TuM1 Reaction Mechanisms in Patterning Hafnium Aluminate High-k Thin Films R.M. Martin, University of California at Los Angeles, H.-O. Blom, Uppsala University, Sweden, J.P. Chang, University of California at Los Angeles |
| 8:20am | PS2-TuM2 Tungsten and Tungsten Nitride Etch Characterization for sub 45nm Metal Gate T. Morel, STMicroelectronics France, S. Barnola, CEA-LETI France, O. Joubert, CNRS/LTM France |
| 8:40am | PS2-TuM3 Nitride Spacers Dry Etching for sub-20nm HfO2 - Metal Gate on Fully Depleted SOI C. Arvet, STMicroelec., FR, J. Chiaroni, V. Loup, CEA-Léti/Minatec, FR, P. Besson, STMicroelec., FR, P. Brianceau, CEA-Léti/Minatec, FR, M.P. Clement, STMicroelec., FR, V. Delaye, L. Tosti, C. Buj, CEA-Léti/Minatec, FR, O. Louveau, STMicroelec., FR, E. Vermande, M. Heitzmann, S. Barnola, CEA-Léti/Minatec, FR, R. Blanc, STMicroelec., FR |
| 9:00am | PS2-TuM4 XPS Sidewall Analyses of Poly Si/TiN/HfO2 Gate Stack Etched with Chlorine and Fluorocarbon Based Chemistries O. Luere, Freescale Semiconductors, France, L. Vallier, E. Pargon, LTM-CNRS, France, L. Thorsten, Applied Materials |
| 9:20am | PS2-TuM5 Reactive Ion Etching of Ru Compounds Modified by Ion Implant C. Park, B.S. Ju, S.C. Song, M. Cruz, SEMATECH, B.H. Lee, R. Jammy, IBM |
| 9:40am | PS2-TuM6 Plasma Etching Processes for Aggressively Scaled Gate Features N.C.M. Fuller, M.A. Guillorn, Y. Zhang, W.S. Graham, E.M. Sikorski, IBM TJ Watson Research Center |
| 10:40am | PS2-TuM9 Investigation of 45nm Silicon Gate Etching Process Variability Contributors L. Babaud, Freescale Semiconductor, France, P. Gouraud, STMicroelectronics, O. Joubert, E. Pargon, CNRS/LTM, France |
| 11:00am | PS2-TuM10 Control of SiO2/Si Interface States during Plasma Etching Processes Y. Ishikawa, Y. Ichihashi, Tohoku University, Japan, S. Yamasaki, National Institute of Advanced Industrial Science and Technology, Japan, S. Samukawa, Tohoku University, Japan |
| 11:20am | PS2-TuM11 Invited Paper Plasma Etching in the Era of Intensive Integration Innovation Th. Lill, Applied Materials, Inc. |
| 12:00pm | PS2-TuM13 The Effect of Oxygen Addition in a Chlorine Plasma during Shallow Trench Isolation Etch C.C. Hsu, J.P. Chang, University of California at Los Angeles |