| AVS 63rd International Symposium & Exhibition | |
| Advanced Ion Microscopy Focus Topic | Thursday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 2:20pm | HI+MI+NS-ThA1 Invited Paper Mask Repair Technology using Gas Field Ion Source Anto Yasaka, F. Aramaki, T. Kozakai, O. Matsuda, Hitachi High-Tech Science Corporation, Japan |
| 3:00pm | HI+MI+NS-ThA3 Application of an Advanced Bi Cluster LMIS for TOF-SIMS Analysis at the Nano-scale F. Kollmer, W. Paul, D. Rading, R. Moellers, ION-TOF GmbH, Germany, N.J. Havercroft, ION-TOF USA, E. Niehuis, Julia Zakel, ION-TOF GmbH, Germany |
| 3:20pm | HI+MI+NS-ThA4 Nanoscale Imaging and Characterization of Interface Driven Assembly of Soft Materials via He-Ion Beam Microscopy Matthew Burch, A. Belianinov, D. Chang, Y. Luo, K. Hong, O.S. Ovchinikova, Oak Ridge National Laboratory |
| 4:00pm | HI+MI+NS-ThA6 Advances in Ex Situ Lift Out and Manipulation Techniques for FIB Applications Lucille Giannuzzi, EXpressLO LLC |
| 4:20pm | HI+MI+NS-ThA7 Helium Ion Microscopy Imaging of Carbon Nanofoams from Hydrothermal Carbonization of Sucrose A. Beyer, Natalie Frese, Bielefeld University, Germany, S.T. Mitchell, A. Bowers, K. Sattler, University of Hawaii, A. Gölzhäuser, Bielefeld University, Germany |
| 4:40pm | HI+MI+NS-ThA8 Nanofabrication Limits in Layered Ferroelectric Semiconductors via He-ion Beam Alexei Belianinov, A. Ievlev, V. Iberi, H. Hysmith, M.A. Susner, M. McGuire, S. Jesse, S.V. Kalinin, O.S. Ovchinnikova, Oak Ridge National Laboratory |
| 5:00pm | HI+MI+NS-ThA9 Focused Ion Beam Technology Challenges for Circuit Edit Yuval Greenzweig, Y. Drezner, A. Raveh, Intel Corporation |
| 5:20pm | HI+MI+NS-ThA10 Ion-milling of Graphene Nanostructures While Supported and Unsupported: Considerations of Graphene Contamination, Substrate Scattering and Beam Tailing J. Swett, Lockheed Martin Space Systems Company, V. Iberi, D. Cullen, Adam Rondinone, Oak Ridge National Laboratory |
| 5:40pm | HI+MI+NS-ThA11 Interaction of Gas Field Ionized Nitrogen with Silicon Marek Schmidt, Y. Oshima, L.T. Anh, X. Zhang, T. Kanzaki, M. Akabori, Japan Advanced Institute of Science and Technology, Japan, A. Yasaka, Hitachi High-Tech Science Corporation, Japan, M. Muruganathan, T. Shimoda, H. Mizuta, Japan Advanced Institute of Science and Technology, Japan |
| 6:00pm | HI+MI+NS-ThA12 Spatially Controlled Ripple Formation in the HIM using Low Voltages and High Temperatures Gregor Hlawacek, L. Sottili, M. Engler, S. Facsko, Helmholtz-Zentrum Dresden Rossendorf, Germany |