AVS 63rd International Symposium & Exhibition
    Advanced Ion Microscopy Focus Topic Thursday Sessions
       Session HI+MI+NS-ThA

Paper HI+MI+NS-ThA10
Ion-milling of Graphene Nanostructures While Supported and Unsupported: Considerations of Graphene Contamination, Substrate Scattering and Beam Tailing

Thursday, November 10, 2016, 5:20 pm, Room 104A

Session: Ion Beam Based Imaging and Nanofabrication
Presenter: Adam Rondinone, Oak Ridge National Laboratory
Authors: J. Swett, Lockheed Martin Space Systems Company
V. Iberi, Oak Ridge National Laboratory
D. Cullen, Oak Ridge National Laboratory
A.J. Rondinone, Oak Ridge National Laboratory
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Graphene and other 2D materials offer novel characteristics and opportunities compared to traditional thin films. Common nanofabrication techniques including e-beam and nanoimprint lithography can be used to pattern atomically thin 2D systems but the multi-step processes they utilize result in exposure of the film to solvents and resists, and hence degradation of the material’s novel electronic properties. Herein we demonstrate that helium and neon-ion milling are effective tools for the creation of very fine features with arbitrary geometries in supported and unsupported graphene, to include conductive structures, arrays of pores, and engineered defects. Properties of graphene, including contamination levels, play an important role in determining millability, as do instrumental parameters such as beam tailing and substrate scattering.

Acknowledgement

This research was conducted at the Center for Nanophase Materials Sciences, which is a Department of Energy (DOE) Office of Science User Facility.