AVS 63rd International Symposium & Exhibition
    Advanced Ion Microscopy Focus Topic Thursday Sessions
       Session HI+MI+NS-ThA

Invited Paper HI+MI+NS-ThA1
Mask Repair Technology using Gas Field Ion Source

Thursday, November 10, 2016, 2:20 pm, Room 104A

Session: Ion Beam Based Imaging and Nanofabrication
Presenter: Anto Yasaka, Hitachi High-Tech Science Corporation, Japan
Authors: A. Yasaka, Hitachi High-Tech Science Corporation, Japan
F. Aramaki, Hitachi High-Tech Science Corporation, Japan
T. Kozakai, Hitachi High-Tech Science Corporation, Japan
O. Matsuda, Hitachi High-Tech Science Corporation, Japan
Correspondent: Click to Email
We developed a new ion beam based mask repair system using a gas field ion source (GFIS). For conventional photomasks, nitrogen ions were used to repair defects, while hydrogen ions were used for EUVL masks. We evaluated the performance of the mask repar system on MoSi based phase shift masks and EUV masks. The results demonstrates that GFIS technology is a reliable solution of repairing defects on high end photomasks for 1Xnm generation and beyond.