AVS 63rd International Symposium & Exhibition
    Advanced Ion Microscopy Focus Topic Thursday Sessions
       Session HI+MI+NS-ThA

Paper HI+MI+NS-ThA3
Application of an Advanced Bi Cluster LMIS for TOF-SIMS Analysis at the Nano-scale

Thursday, November 10, 2016, 3:00 pm, Room 104A

Session: Ion Beam Based Imaging and Nanofabrication
Presenter: Julia Zakel, ION-TOF GmbH, Germany
Authors: F. Kollmer, ION-TOF GmbH, Germany
W. Paul, ION-TOF GmbH, Germany
D. Rading, ION-TOF GmbH, Germany
R. Moellers, ION-TOF GmbH, Germany
N.J. Havercroft, ION-TOF USA
E. Niehuis, ION-TOF GmbH, Germany
J. Zakel, ION-TOF GmbH, Germany
Correspondent: Click to Email

In recent years, the application of cluster primary ions has become standard for all kinds of TOF-SIMS applications. Organic surfaces, in particular, benefit from the cluster bombardment due to a more efficient emission of molecular species compared to mono-atomic bombardment. However, the ultimate spot size so far has been obtained by Ga based liquid metal ion sources. In our contribution we will show that a Bi based cluster LMIS has the potential to outperform the established Ga LMIS even in terms of TOF-SIMS imaging at the highest lateral resolution.

We will discuss fundamental emission properties such as energy spread and virtual source size for the main species of a Bi cluster LMIS. Via a consistent optimisation of emission parameters and an adaption of the ion-optical column, a lateral resolution in the 20 nm range can be achieved. At this scale it seems that we are approaching the physical limits since not only the primary ion beam spot size, but also the size of the sputter cascade as well as the signal intensity limit the obtainable useful lateral resolution. Further progress requires the combination of the SIMS data with complimentary imaging techniques of higher lateral resolution or sophisticated sample preparation methods such as bevelling of the surface region with an FIB column.

In this respect we will show that a combined TOF-SIMS Scanning Probe Microscopy (SPM) provides the required information on the nanometer level. Moreover, information on surface topography and other physical properties of the scanned surface area can be obtained in-situ. The investigated samples include inorganic reference samples, alloys, biological samples, hybrid sample systems and thin films.