AVS 53rd International Symposium
    Thin Film Tuesday Sessions

Session TF-TuP
Thin Film Poster Session

Tuesday, November 14, 2006, 6:00 pm, Room 3rd Floor Lobby


  Click here to Download program book for this session  
  in Adobe Acrobat format  

Click a paper to see the details. Presenters are shown in bold type.

TF-TuP1
Effect of Particle Transport Process on Mode Transition and Film Composition during Reactive Sputtering of Metal Oxides
T. Nakano, Y. Iimura, S. Baba, Seikei University, Japan
TF-TuP2
Hydrogen Uptake in MgO Thin Films Grown by Reactive Magnetron Sputtering
J.S. Agustsson, Mentis Cura ehf, Iceland, B.V. Agustsson, Royal Institute of Technology, Sweden, A.K. Eriksson, University of Iceland, K.B. Gylfason, Lyfjathroun Biopharmaceuticals, Iceland, S. Olafsson, University of Iceland, K. Johnsen, Mentis Cura ehf, Iceland, J.T. Gudmundsson, University of Iceland
TF-TuP3
Structure and Electronic Properties of Molybdenum Oxide Thin Films Fabricated by DC Magnetron Sputtering
V.V. Atuchin, B.M. Ayupov, T.A. Gavrilova, T.I. Grigorieva, V.A. Kochubey, Institute of Semiconductor Physics, C.V. Ramana, U. Becker, University of Michigan
TF-TuP4
Transparent Conducting AZO Thin Films Prepared by Magnetron Sputtering with DC and RF Power Applied in Combination
T. Minami, Y. Ohtani, T. Miyata, T. Kuboi, Kanazawa Institute of Technology, Japan
TF-TuP5
Effect of Target Density and Sputtering Parameters on Film Structure and Resistivity of Tungsten
C.F. Lo, Praxair Surface Technologies - MRC
TF-TuP6
Combinatorial Synthesis and Characterization of Magnetic Fe@sub x@Al@sub 1-x@N Thin Films for Biomedical Applications
Y. Guan, P.D. Rack, The University of Tennessee, Knoxville, X. Wang, Y. Liu, Alfred University, K.D. Sorge, Florida Atlantic University
TF-TuP7
Investigation of Luminescence and Microstructure of Sputter-deposited Zinc Gallate Thin Films Doped with Manganese
J.H. Kim, Chungbuk National University, Korea, P.H. Holloway, University of Florida
TF-TuP8
Compositional Characterization of High-k Dielectric Material via XPS and TOF-ERDA
D. Martin, J. Enlund, O. Kappertz, J. Jensen, Uppsala University, Sweden
TF-TuP9
Transparent Conducting Amorphous ZnO-In@sub 2@O@sub 3@ Films Deposited on PC or PET Substrate
T. Moriga, H. Suketa, K. Takita, D. Takada, K. Shimomura, K. Inoue, K. Murai, K. Tominaga, The University of Tokushima, Japan
TF-TuP10
Thermophysical Properties and Electrical Properties of Amorphous In@sub 2@O@sub 3@-ZnO Films
T. Ashida, A. Miyamura, Y. Sato, Y. Shigesato, Aoyama Gakuin University, Japan, T. Yagi, N. Taketoshi, T. Baba, National Institute of Advanced Industrial Science and Technology, Japan
TF-TuP11
Transparent Conductive Oxide Films of In2O3-ZnO with Additional Ga2O3 Impurities
K. Tominaga, D. Takada, H. Suketa, K. Takita, K. Shimomura, K. Inoue, K. Murai, T. Moriga, The University of Tokushima, Japan
TF-TuP12
High Resistive ZnO Thin Films Sputtered from ZnO@sub 2@-doped ZnO Target
K. Wasa, Kyoto University, Japan, Y.J. Shan, Utsunomiya University, Japan, I. Kanno, T. Suzuki, Kyoto University, Japan
TF-TuP13
Abnormal Resistivity Change in Indium-Tin Oxide Films
S. Takayama, Hosei University, Japan
TF-TuP14
Multi-layered Depleted Uranium and Gold Coatings on Cylindrical Substrates
H. Wilkens, General Atomics, J.L. Klingmann, Lawrence Livermore National Laboratory, A. Nikroo, D.R. Wall, J.R. Wall, General Atomics
TF-TuP15
Nano-Composite Amorphous Carbon (a-C) Thin Films to Improve the Tribological Properties
Y.S. Park, H.J. Cho, B. Hong, Sungkyunkwan University, Korea
TF-TuP16
Preliminary Study of CuIn@subx@B@sub1-x@Se@sub2@ Absorber Materials
N.J. Ianno, T. Santero, R.J. Soukup, University of Nebraska-Lincoln
TF-TuP17
Lubricant Characteristics of Ti doped Hydrogenated Amorphous Carbon Films Prepared by Closed-Field Unbalanced Magnetron Sputtering Method
H.J. Cho, Y.S. Park, B. Hong, Sungkyunkwan University, Korea
TF-TuP18
Anisotropic Microstructure of PVD Coatings Caused by Anisotropy in Flux Distribution of Arriving Atoms
S.Yu. Grachev, J.-D. Kamminga, Netherlands Institute for Metals Research, the Netherlands, T. Smy, Carleton University, Canada, G.C.A.M. Janssen, R. Machunze, Technical University Delft, the Netherlands
TF-TuP19
Comparative Study on Super-Hardcoating Materials between Ti@sub x@W@sub y@N and Ti@sub x@Al@sub y@Si@sub z@N Deposited by Reactive Co-Sputtering
M. Yamaguchi, A. Miyamura, Aoyama Gakuin University, Japan, K. Hattori, National Institute of Advanced Industrial Science and Technology, Japan, T. Aoki, Y. Sato, Y. Shigesato, Aoyama Gakuin University, Japan
TF-TuP20
Target Surface Compound Layers Formed by Reactive Sputtering of Si Target in Ar+O@sub 2@ and Ar+N@sub 2@ Mixed Gases
Y. Abe, T. Takisawa, M. Kawamura, K. Sasaki, Kitami Institute of Technology, Japan
TF-TuP21
Heat Treatment Effect in Palladium Oxide Composite Films Fabricated by Reactive Ion Beam Sputter-Deposition
T. Ichinohe, S. Masaki, Tokyo National College of Technology, Japan, M. Iwase, Tokai University, Japan, K. Kawasaki, TDY, Co, Ltd., Japan
TF-TuP22
Theoretical and Experimental Study of Thin-Film Precursor Vaporization
J. Peck, M.M. Litwin, Praxair, Inc.
TF-TuP23
Film Improvement of ALD TaN Layers by Application of Additional Energy
D. Schmidt, C. Hossbach, M. Albert, Technische Universitaet Dresden, Germany, S. Menzel, Leibnitz Institute for Solide State and Materials Research Dresden, Germany, J.-W. Bartha, Technische Universitaet Dresden, Germany
TF-TuP24
Device-Quality SiO@sub 2@ Dielectric Film Formation using UV-light Excited High Purity Ozone and Organic Silicon Source at 200 @super o@C
N. Kameda, T. Nishiguchi, S. Saitoh, T. Noyori, Y. Morikawa, M. Kekura, Meidensha Corporation, Japan, H. Nonaka, S. Ichimura, National Institute of Advanced Industrial Science and Technology (AIST), Japan
TF-TuP25
Preparation and Photocatalytic Activity of CdS/TiO@subX@N@subY@ Heterojunctions
K. Prabakar, T. Takahashi, K. Takahashi, T. Nezuka, University of Toyama, Japan, T. Nakashima, Kashiwa Chuo High School, Japan, Y. Kubota, University of Yokohama City, Japan, A. Fujishima, Kanagawa Academy of Science and Technology, Japan
TF-TuP26
Ferroelectric Properties of Highly Oriented BLT Films using HfO@sub 2@ as Buffer Layers for Ferroelectric-Gate Field-Effect Transistors
K.T. Kim, G.H. Kim, Chung-Ang University, Korea, C.I. Lee, Ansan College of Technology, Korea, C.I. Kim, Chung-Ang University, Korea
TF-TuP27
Zirconia in Sputter Deposited Oxide Nanolaminate Films: Interfacial Structures, Size Effects, and Metastable Phases
C.R. Aita, R.S. Sorbello, University of Wisconsin-Milwaukee