AVS 53rd International Symposium
    Thin Film Tuesday Sessions
       Session TF-TuP

Paper TF-TuP9
Transparent Conducting Amorphous ZnO-In@sub 2@O@sub 3@ Films Deposited on PC or PET Substrate

Tuesday, November 14, 2006, 6:00 pm, Room 3rd Floor Lobby

Session: Thin Film Poster Session
Presenter: H. Suketa, The University of Tokushima, Japan
Authors: T. Moriga, The University of Tokushima, Japan
H. Suketa, The University of Tokushima, Japan
K. Takita, The University of Tokushima, Japan
D. Takada, The University of Tokushima, Japan
K. Shimomura, The University of Tokushima, Japan
K. Inoue, The University of Tokushima, Japan
K. Murai, The University of Tokushima, Japan
K. Tominaga, The University of Tokushima, Japan
Correspondent: Click to Email
Transparent conductors on organic polymer substrates have many applications, such as in plastic liquid crystal display devices, flexible electro-optical devices and so on. However, the deformation temperature of organic polymer substrates such as polycarbonate (PC) and polyethylene terephthalate is usually as low as ca. 100°C, low-temperature depositions should be performed to prevent the deformation of the films. We have reported that the amorphous ZnO-In@sub 2@O@sub 3@ films on a glass substrate deposited by simultaneous DC magnetron sputtering with facing dual targets showed the minimum resistivity of 2x10@super -4@@ohm@cm at substrate temperatures of 150°C or the less. Amorphous ZnO-In@sub 2@O@sub 3@ films with low resistivity comparable to ITO films will have an advantage over ITO films in low-temperature depositions. Two disk targets of ZnO and In@sub 2@O@sub 3@ were sputtered simultaneously in Ar gas at a pressure of 1mTorr, and electric current ratio @delta@=I@sub Zn@/(I@sub Zn@+I@sub In@) was adopted as a deposition parameter to change film composition. Discharge current of each target was changed from 0 to 80mA in order to change the contents of Zn and In in the film. The amorphous films both on the PC and PET substrates showed the minimum resistivity at @delta@=0.50, which corresponds to the film composition [Zn]/([Zn]+[In])=0.33. A monotonous increase in resistivity with an increase of zinc content was observed while the films maintained amorphous.