AVS 53rd International Symposium
    Thin Film Tuesday Sessions
       Session TF-TuP

Paper TF-TuP12
High Resistive ZnO Thin Films Sputtered from ZnO@sub 2@-doped ZnO Target

Tuesday, November 14, 2006, 6:00 pm, Room 3rd Floor Lobby

Session: Thin Film Poster Session
Presenter: K. Wasa, Kyoto University, Japan
Authors: K. Wasa, Kyoto University, Japan
Y.J. Shan, Utsunomiya University, Japan
I. Kanno, Kyoto University, Japan
T. Suzuki, Kyoto University, Japan
Correspondent: Click to Email
Thin films of ZnO were fabricated on a fused silica substrate by a direct sputtering from ZnO powder target. The sputtering was done typically at the sputtering argon gas pressure: 0.5Pa, the deposition temperature: 500@super o@C, the sputtering rf power: 90W for 4 inch target, and the deposition time: 90 min. The film thickness was 1.8µm with the deposition rate of 1.2µm/hr. The sputtered films showed c-axis highly oriented ZnO thin films. The dark resistivity of the ZnO thin films was 5x10@super 3@ ohm-cm and/or conductivity was 0.2x10@super -3@ /ohm-cm at room temperature. The effect of doping of ZnO@sub 2@ was investigated using mixed powder target of ZnO and ZnO@sub 2@(15mol %). It was found the doping of ZnO@sub 2@  reduced the deposition rate. Typical deposition rate was 0.9µm/hr. The electrical resistivity increased by three orders in a magnitude. High resistivity of 1.6x10@super 6@ohm-cm was obtained by the direct sputtering from the ZnO@sub 2@-doped ZnO target in a pure argon atmosphere. The sputtering mode will be changed by the doping of ZnO@sub 2@ since the deposition rates remarkably decreased by the doping. The high energetic oxygen atoms sputtered from the ZnO@super 2@ will play important roll for the oxidization of the sputtered ZnO resulting in the increase of resistivity of sputtered ZnO thin films.