AVS 53rd International Symposium
    Thin Film Tuesday Sessions
       Session TF-TuP

Paper TF-TuP2
Hydrogen Uptake in MgO Thin Films Grown by Reactive Magnetron Sputtering

Tuesday, November 14, 2006, 6:00 pm, Room 3rd Floor Lobby

Session: Thin Film Poster Session
Presenter: J.S. Agustsson, Mentis Cura ehf, Iceland
Authors: J.S. Agustsson, Mentis Cura ehf, Iceland
B.V. Agustsson, Royal Institute of Technology, Sweden
A.K. Eriksson, University of Iceland
K.B. Gylfason, Lyfjathroun Biopharmaceuticals, Iceland
S. Olafsson, University of Iceland
K. Johnsen, Mentis Cura ehf, Iceland
J.T. Gudmundsson, University of Iceland
Correspondent: Click to Email
We explore the hydrogen uptake in MgO thin films, grown by reactive magnetron sputtering. When introducing hydrogen during the growth of MgO thin films, the electrical properties dielectric are affected. A lattice matched heteroepitaxial metal--insulator--metal (MIM) structure was grown. CrMo alloy was used as the metal electrode and the composition chosen so that the film is lattice matched to the substrate when the <100> direction of the alloy is parallel to the <011> direction of the substrate. The hydrogen uptake was determined by nuclear resonance analysis measurements using @super 1@H(@super 15@N,@alpha@@gamma@)@super 12@C. The electrical properties of the MgO films were assessed by impedance spectroscopy. We relate hopping conduction observed in the MgO to the introduction of hydrogen into the sputtering chamber during the growth of the dielectric films.