AVS 53rd International Symposium
    Thin Film Tuesday Sessions
       Session TF-TuP

Paper TF-TuP3
Structure and Electronic Properties of Molybdenum Oxide Thin Films Fabricated by DC Magnetron Sputtering

Tuesday, November 14, 2006, 6:00 pm, Room 3rd Floor Lobby

Session: Thin Film Poster Session
Presenter: V.V. Atuchin, Institute of Semiconductor Physics
Authors: V.V. Atuchin, Institute of Semiconductor Physics
B.M. Ayupov, Institute of Semiconductor Physics
T.A. Gavrilova, Institute of Semiconductor Physics
T.I. Grigorieva, Institute of Semiconductor Physics
V.A. Kochubey, Institute of Semiconductor Physics
C.V. Ramana, University of Michigan
U. Becker, University of Michigan
Correspondent: Click to Email
Molybdenum oxide (MoO@sub 3@) exhibits interesting structural, chemical, electrical, and optical properties, which are dependent on the growth conditions and the deposition technique. In the present work, MoO@sub 3@ films were produced by DC magnetron sputtering using a Mo target under varying conditions of substrate temperature (T@sub s@) and oxygen partial pressure (pO@sub 2@). The effect of Ts and pO@sub 2@ on the structure and electronic properties of Mo oxide films was examined in detail using reflection high-energy electron diffraction (RHEED), X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), energy dispersive X-ray spectrometry (EDS) and laser ellipsometry (λ = 0.6328 μm) measurements. The analyses indicate that the microstructure and phase of sputtered Mo oxide films is sensitive to T@sub s@ and pO@sub 2@. The growth conditions were optimized to produce stoichiometric and polycrystalline MoO@sub 3@ films. A uniform refractive index profile with n = 1.59 and optical absorption k ~ 0.001 was found for a typical textured MoO@sub 3@ film. The results will be presented and discussed in detail to establish a correlation between the microstructure and optical properties of Mo oxide films.